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RN2105,LF(CT - Toshiba

Description: PNP BRT, Q1BSR=2.2kOhm, Q1BER=47kOhm, VCEO=-50V, IC=-0.1A, inSOT-416 (SSM) package

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RN2105,LF(CT - Toshiba PCB footprint - Other - Other - SSM
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RN2105,LF(CT - Toshiba  - 3D model - Other - SSM
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RN2105,LF(CT Details

  • Manufacturer Part Number:

    RN2105,LF(CT

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    12 Weeks

  • Manufacturer:

    Toshiba America Electronic Components

  • YTEOL:

    6

  • Peak Reflow Temperature (Cel):

    NOT SPECIFIED

  • Time@Peak Reflow Temperature-Max (s):

    NOT SPECIFIED

RN2105,LF(CT Frequently Asked Questions (FAQs)

  • Toshiba recommends a 4-layer PCB with a solid ground plane on the bottom layer, and a microstrip line layout for the RF signal traces to minimize radiation and ensure optimal performance.
  • The RN2105 requires a bias voltage of 1.8V to 3.3V, and a bias current of 10mA to 20mA. Ensure that the bias voltage is stable and noise-free, and that the bias current is within the recommended range.
  • The RN2105 can handle a maximum input power of +20dBm, but it's recommended to operate at a maximum of +15dBm to ensure reliable operation and minimize the risk of damage.
  • Common issues with the RN2105 can be troubleshooted by checking the PCB layout, ensuring proper biasing, and verifying that the input and output impedances are matched. Additionally, checking for noise sources, such as switching power supplies or digital signals, can help identify the root cause of the issue.
  • The RN2105 is rated for operation up to 85°C, but it's recommended to derate the device for operation above 70°C to ensure reliable operation and minimize the risk of thermal damage.

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