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RN4989FE,LF(CT - Toshiba

Description: NPN + PNP BRT, Q1BSR=47kOhm, Q1BER=22kOhm, Q2BSR=47kOhm, Q2BER=22kOhm, VCEO=50V, IC=0.1A

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PCB Footprints
RN4989FE,LF(CT - Toshiba PCB footprint - SO Transistor Flat Lead - SO Transistor Flat Lead - ES6 (SON6-P-0.50)_
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3D Models
RN4989FE,LF(CT - Toshiba  - 3D model - SO Transistor Flat Lead - ES6 (SON6-P-0.50)_
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RN4989FE,LF(CT Details

  • Manufacturer Part Number:

    RN4989FE,LF(CT

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    12 Weeks

  • Manufacturer:

    Toshiba America Electronic Components

  • YTEOL:

    6

  • Additional Feature:

    BUILT IN BIAS RESISTOR RATIO IS 0.46

  • Collector Current-Max (IC):

    0.1 A

  • Collector-Base Capacitance-Max:

    6 pF

  • Collector-Emitter Voltage-Max:

    50 V

  • Configuration:

    SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

  • DC Current Gain-Min (hFE):

    70

  • JESD-30 Code:

    R-PDSO-F6

  • Number of Elements:

    2

  • Number of Terminals:

    6

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Polarity/Channel Type:

    NPN AND PNP

  • Power Dissipation Ambient-Max:

    0.1 W

  • Power Dissipation-Max (Abs):

    0.1 W

  • Surface Mount:

    YES

  • Terminal Form:

    FLAT

  • Terminal Position:

    DUAL

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

  • Transition Frequency-Nom (fT):

    250 MHz

  • VCEsat-Max:

    0.3 V

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RN4989FE,LF(CT Overview

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