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RTF025N03TL - ROHM Semiconductor

Description: Nch 30V 2.5A Small Signal MOSFET RDS(on)(Max.):67mΩ , ID :±2.5A

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RTF025N03TL - ROHM Semiconductor PCB footprint - Other - Other - RTF025N03TL
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RTF025N03TL - ROHM Semiconductor  - 3D model - Other - RTF025N03TL
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RTF025N03TL Details

  • Manufacturer Part Number:

    RTF025N03TL

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Not Recommended

  • Package Description:

    TUMT3, 3 PIN

  • Pin Count:

    3

  • Country Of Origin:

    Philippines, Thailand

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    21 Weeks

  • Manufacturer:

    ROHM Semiconductor

  • YTEOL:

    3

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    30 V

  • Drain Current-Max (ID):

    2.5 A

  • Drain-source On Resistance-Max:

    0.098 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JESD-30 Code:

    R-PDSO-F3

  • JESD-609 Code:

    e2

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    0.8 W

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    Tin/Copper (Sn/Cu)

  • Terminal Form:

    FLAT

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

RTF025N03TL Frequently Asked Questions (FAQs)

  • A recommended PCB layout for optimal thermal performance would be to have a large copper area connected to the drain pin (pin 3) to dissipate heat efficiently. Additionally, using thermal vias and a thick copper layer can help to reduce thermal resistance.
  • To ensure stability during high-frequency switching, it is recommended to use a low-ESR ceramic capacitor (e.g., 1uF to 10uF) between the drain and source pins, and to minimize the PCB trace inductance and resistance. Additionally, a snubber circuit can be used to reduce ringing and oscillations.
  • The maximum allowable power dissipation for the RTF025N03TL is dependent on the ambient temperature and the thermal resistance of the device. According to the datasheet, the maximum power dissipation is 2.5W at a junction temperature of 25°C. However, this value can be derated based on the actual operating conditions.
  • Yes, the RTF025N03TL is a qualified device for high-reliability applications. ROHM Semiconductor provides a range of reliability tests and qualifications, including AEC-Q101, to ensure the device meets the requirements for automotive and industrial applications.
  • To protect the RTF025N03TL from electrostatic discharge (ESD), it is recommended to use ESD protection devices, such as TVS diodes or ESD arrays, on the input and output pins. Additionally, proper handling and storage procedures should be followed to prevent ESD damage.

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RTF025N03TL Overview

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