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RUL035N02FRATR - ROHM Semiconductor

Description: N-Channel 20 V 3.5A (Ta) 1W (Ta) Surface Mount TUMT6

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RUL035N02FRATR - ROHM Semiconductor - PCB symbol
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RUL035N02FRATR - ROHM Semiconductor PCB footprint - Other - Other - RUL035N02FRATR-1
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RUL035N02FRATR - ROHM Semiconductor - 3D model - Other - RUL035N02FRATR-1
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RUL035N02FRATR Details

  • Manufacturer Part Number:

    RUL035N02FRATR

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Not Recommended

  • ECCN Code:

    EAR99

  • Manufacturer:

    ROHM Semiconductor

  • YTEOL:

    3

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    20 V

  • Drain Current-Max (ID):

    3.5 A

  • Drain-source On Resistance-Max:

    0.053 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    60 pF

  • JESD-30 Code:

    R-PDSO-F6

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    6

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    1 W

  • Reference Standard:

    AEC-Q101

  • Surface Mount:

    YES

  • Terminal Form:

    FLAT

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

RUL035N02FRATR Frequently Asked Questions (FAQs)

  • The recommended operating temperature range for RUL035N02FRATR is -40°C to 150°C.
  • To ensure reliability, it's essential to follow the recommended derating guidelines, ensure proper thermal management, and consider the device's power dissipation and thermal resistance.
  • The maximum allowable power dissipation for RUL035N02FRATR is 2.5W. Exceeding this limit may lead to device failure or reduced lifespan.
  • While RUL035N02FRATR is suitable for high-frequency applications, it's essential to consider the device's transition frequency (ft) and ensure that the operating frequency is within the recommended range.
  • To prevent electrostatic discharge (ESD) damage, it's recommended to follow proper handling and storage procedures, use ESD-protective packaging, and implement ESD protection circuits in the design.

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RUL035N02FRATR Overview

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