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RUM002N02T2L - ROHM Semiconductor

Description: 1.2V Drive Nch MOSFET

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PCB Footprints
RUM002N02T2L - ROHM Semiconductor PCB footprint - SO Transistor Flat Lead - SO Transistor Flat Lead - VMT3
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3D Models
RUM002N02T2L - ROHM Semiconductor  - 3D model - SO Transistor Flat Lead - VMT3
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RUM002N02T2L Details

  • Manufacturer Part Number:

    RUM002N02T2L

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Package Description:

    VMT3, 3 PIN

  • Pin Count:

    3

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    21 Weeks

  • Manufacturer:

    ROHM Semiconductor

  • YTEOL:

    9

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    20 V

  • Drain Current-Max (ID):

    0.2 A

  • Drain-source On Resistance-Max:

    1.4 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JESD-30 Code:

    R-PDSO-F3

  • JESD-609 Code:

    e2

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    0.15 W

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    Tin/Copper (Sn/Cu)

  • Terminal Form:

    FLAT

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    10

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

RUM002N02T2L Frequently Asked Questions (FAQs)

  • A recommended PCB layout for optimal thermal performance of RUM002N02T2L is to use a thermal pad on the bottom of the package, connected to a large copper area on the PCB to dissipate heat efficiently.
  • To ensure reliability in high-temperature applications, it is recommended to follow the derating guidelines provided in the datasheet, and to consider using a heat sink or thermal interface material to reduce the junction temperature.
  • The maximum allowed voltage transient for RUM002N02T2L is typically 10% above the maximum rated voltage, but it's recommended to consult the datasheet or contact ROHM Semiconductor for specific guidance.
  • Yes, RUM002N02T2L is suitable for high-frequency switching applications, but it's essential to consider the device's switching characteristics, such as rise and fall times, and to ensure that the PCB layout is optimized for high-frequency operation.
  • To protect RUM002N02T2L from ESD, it's recommended to follow standard ESD handling procedures, such as using an ESD wrist strap or mat, and to ensure that the device is stored in an ESD-safe environment.

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RUM002N02T2L Overview

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