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RXL035N03TCR - ROHM Semiconductor

Description: Nch 30V 3..5A Small Signal MOSFET

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RXL035N03TCR - ROHM Semiconductor PCB footprint - Other - Other - RXL035N03TCR-3
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RXL035N03TCR - ROHM Semiconductor  - 3D model - Other - RXL035N03TCR-3
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RXL035N03TCR Details

  • Manufacturer Part Number:

    RXL035N03TCR

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Not Recommended

  • ECCN Code:

    EAR99

  • Date Of Intro:

    2017-03-13

  • Manufacturer:

    ROHM Semiconductor

  • YTEOL:

    3

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    30 V

  • Drain Current-Max (ID):

    3.5 A

  • Drain-source On Resistance-Max:

    0.07 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JESD-30 Code:

    R-PDSO-F6

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    6

  • Operating Mode:

    ENHANCEMENT MODE

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Surface Mount:

    YES

  • Terminal Form:

    FLAT

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

RXL035N03TCR Frequently Asked Questions (FAQs)

  • ROHM recommends a thermal pad on the bottom of the package, connected to a large copper area on the PCB to dissipate heat efficiently. A minimum of 2oz copper thickness is recommended, and the thermal pad should be connected to a ground plane or a dedicated heat sink.
  • The RXL035N03TCR requires a bias voltage of 5V to 12V, with a recommended operating voltage of 10V. Ensure the bias voltage is stable and within the recommended range to achieve optimal performance and minimize thermal issues.
  • The maximum SOA for the RXL035N03TCR is not explicitly stated in the datasheet. However, ROHM recommends following the safe operating area curves provided in the application notes to ensure the device operates within a safe region and to prevent damage or degradation.
  • While the RXL035N03TCR is a high-speed device, it's not optimized for high-frequency switching applications. ROHM recommends using devices specifically designed for high-frequency switching, such as the RXL035N03HCR, which has a lower gate charge and is optimized for high-frequency operation.
  • ROHM recommends following standard ESD protection guidelines, including using ESD-sensitive handling procedures, storing the devices in anti-static packaging, and using ESD protection devices such as TVS diodes or ESD arrays on the PCB.

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RXL035N03TCR Overview

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