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RZF013P01TL - ROHM Semiconductor

Description: 1.5V Drive Pch MOSFET: MOSFETs are made as ultra-low ON-resistance by the micro-processing technologies suitable for mobilr equipment for low current consumption. In wide lineup including compact type, high-power type and complex type to meet in the market.

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RZF013P01TL - ROHM Semiconductor - PCB symbol
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PCB Footprints
RZF013P01TL - ROHM Semiconductor PCB footprint - Other - Other - TUMT3 Master
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3D Models
RZF013P01TL - ROHM Semiconductor - 3D model - Other - TUMT3 Master
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RZF013P01TL Details

  • Manufacturer Part Number:

    RZF013P01TL

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Not Recommended

  • Package Description:

    TUMT3, 3 PIN

  • Pin Count:

    3

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    21 Weeks

  • Manufacturer:

    ROHM Semiconductor

  • YTEOL:

    3

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    12 V

  • Drain Current-Max (ID):

    1.3 A

  • Drain-source On Resistance-Max:

    0.26 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JESD-30 Code:

    R-PDSO-F3

  • JESD-609 Code:

    e2

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    P-CHANNEL

  • Power Dissipation-Max (Abs):

    0.8 W

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    Tin/Copper (Sn/Cu)

  • Terminal Form:

    FLAT

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

RZF013P01TL Frequently Asked Questions (FAQs)

  • A thermal pad on the bottom of the package should be connected to a large copper area on the PCB to dissipate heat efficiently. A minimum of 2oz copper thickness is recommended.
  • The device requires a stable input voltage and a proper biasing circuit to ensure optimal performance. A voltage regulator and a bias resistor network can be used to achieve this.
  • The maximum power dissipation of the RZF013P01TL is 1.5W. However, it's recommended to derate the power dissipation based on the ambient temperature and thermal resistance of the system.
  • Yes, the RZF013P01TL is suitable for high-frequency applications up to 1GHz. However, the device's performance may degrade at higher frequencies due to parasitic capacitance and inductance.
  • The device is sensitive to ESD. It's recommended to handle the device with an anti-static wrist strap or mat, and to use ESD protection devices such as TVS diodes or ESD arrays in the circuit design.

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RZF013P01TL Overview

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