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S29GL01GS12DHVV10 - Infineon

Description: FLASH - NOR Memory IC 1Gbit Parallel 120 ns 64-FBGA (9x9)

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S29GL01GS12DHVV10 - Infineon  - 3D model
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S29GL01GS12DHVV10 Details

  • Manufacturer Part Number:

    S29GL01GS12DHVV10

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • ECCN Code:

    EAR99

  • HTS Code:

    8542.32.00.51

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    10

  • Access Time-Max:

    120 ns

  • Command User Interface:

    YES

  • Common Flash Interface:

    YES

  • Data Polling:

    YES

  • Data Retention Time-Min:

    20

  • Endurance:

    100000 Write/Erase Cycles

  • JESD-30 Code:

    S-PBGA-B64

  • JESD-609 Code:

    e1

  • Length:

    9 mm

  • Memory Density:

    1073741824 bit

  • Memory IC Type:

    FLASH

  • Memory Width:

    16

  • Moisture Sensitivity Level:

    3

  • Number of Functions:

    1

  • Number of Sectors/Size:

    1024

  • Number of Terminals:

    64

  • Number of Words:

    67108864 words

  • Number of Words Code:

    64000000

  • Operating Mode:

    ASYNCHRONOUS

  • Operating Temperature-Max:

    105 °C

  • Operating Temperature-Min:

    -40 °C

  • Organization:

    64MX16

  • Output Characteristics:

    3-STATE

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Code:

    LBGA

  • Package Equivalence Code:

    BGA64,8X8,40

  • Package Shape:

    SQUARE

  • Package Style:

    GRID ARRAY, LOW PROFILE

  • Page Size:

    16 words

  • Parallel/Serial:

    PARALLEL

  • Peak Reflow Temperature (Cel):

    260

  • Programming Voltage:

    3 V

  • Ready/Busy:

    YES

  • Seated Height-Max:

    1.4 mm

  • Sector Size:

    64K

  • Standby Current-Max:

    0.0002 A

  • Supply Current-Max:

    0.1 mA

  • Supply Voltage-Max (Vsup):

    3.6 V

  • Supply Voltage-Min (Vsup):

    2.7 V

  • Supply Voltage-Nom (Vsup):

    3 V

  • Surface Mount:

    YES

  • Technology:

    CMOS

  • Terminal Finish:

    Tin/Silver/Copper (Sn/Ag/Cu)

  • Terminal Form:

    BALL

  • Terminal Pitch:

    1 mm

  • Terminal Position:

    BOTTOM

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Toggle Bit:

    YES

  • Type:

    NOR TYPE

  • Width:

    9 mm

S29GL01GS12DHVV10 Frequently Asked Questions (FAQs)

  • The maximum operating temperature range for the S29GL01GS12DHVV10 is -40°C to +85°C.
  • The hold signal (HOLD#) should be asserted low to pause the current operation and de-asserted high to resume the operation.
  • The write protect (WP#) signal is used to prevent accidental writes to the device. When WP# is low, the device is write-protected.
  • To perform a sector erase operation, send the erase command (0x20) followed by the sector address to be erased. The device will then erase the entire sector.
  • The recommended power-up sequence is to apply VCC first, followed by VPP, and then the clock signal (CLK).

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S29GL01GS12DHVV10 Overview

Use the download button to access the S29GL01GS12DHVV10 3D model. You can still request or build the schematic symbol and PCB footprint by using the respective build or request forms on this page.
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