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S29GL01GT11FHV010 - Infineon

Description: FLASH - NOR Memory IC 1Gbit Parallel 110 ns 64-FBGA (13x11)

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PCB Footprints
S29GL01GT11FHV010 - Infineon PCB footprint - BGA - BGA - LAA064—64-ball FBGA (13.0 × 11.0 × 1.4 mm)
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S29GL01GT11FHV010 - Infineon  - 3D model - BGA - LAA064—64-ball FBGA (13.0 × 11.0 × 1.4 mm)
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S29GL01GT11FHV010 Details

  • Manufacturer Part Number:

    S29GL01GT11FHV010

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • ECCN Code:

    EAR99

  • HTS Code:

    8542.32.00.51

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    10

  • Access Time-Max:

    110 ns

  • Boot Block:

    BOTTOM/TOP

  • JESD-30 Code:

    R-PBGA-B64

  • JESD-609 Code:

    e1

  • Length:

    13 mm

  • Memory Density:

    1073741824 bit

  • Memory IC Type:

    FLASH

  • Memory Width:

    16

  • Moisture Sensitivity Level:

    3

  • Number of Functions:

    1

  • Number of Terminals:

    64

  • Number of Words:

    67108864 words

  • Number of Words Code:

    64000000

  • Operating Mode:

    ASYNCHRONOUS

  • Operating Temperature-Max:

    105 °C

  • Operating Temperature-Min:

    -40 °C

  • Organization:

    64MX16

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Code:

    LBGA

  • Package Shape:

    RECTANGULAR

  • Package Style:

    GRID ARRAY, LOW PROFILE

  • Parallel/Serial:

    PARALLEL

  • Peak Reflow Temperature (Cel):

    260

  • Programming Voltage:

    2.7 V

  • Seated Height-Max:

    1.4 mm

  • Supply Current-Max:

    0.06 mA

  • Supply Voltage-Max (Vsup):

    3.6 V

  • Supply Voltage-Min (Vsup):

    2.7 V

  • Supply Voltage-Nom (Vsup):

    3 V

  • Surface Mount:

    YES

  • Technology:

    CMOS

  • Temperature Grade:

    INDUSTRIAL

  • Terminal Finish:

    Tin/Silver/Copper (Sn/Ag/Cu)

  • Terminal Form:

    BALL

  • Terminal Pitch:

    1 mm

  • Terminal Position:

    BOTTOM

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Type:

    NOR TYPE

  • Width:

    11 mm

S29GL01GT11FHV010 Frequently Asked Questions (FAQs)

  • The recommended operating temperature range for the S29GL01GT11FHV010 is -40°C to +85°C, with a storage temperature range of -65°C to +150°C.
  • The hold pin (HOLD#) should be driven low to pause the current operation and enter a low-power state. When HOLD# is low, the device will ignore all inputs and will not respond to any commands.
  • The write protect pin (WP#) is used to prevent accidental writes to the device. When WP# is low, the device is in write-protect mode, and any write operations will be ignored. To enable write operations, WP# should be driven high.
  • The S29GL01GT11FHV010 is a 1 Gb (128 MB) flash memory device, organized as 8192 blocks of 128 KBytes each. The device density and organization can be determined by reading the device ID and querying the device's configuration registers.
  • The typical programming time for the S29GL01GT11FHV010 is around 3-5 seconds for a full chip erase, and around 10-20 microseconds for a single byte or word program operation.

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