S29GL512S12DHE010 - Infineon

S29GL512S12DHE010 Details

• Manufacturer Part Number:

  S29GL512S12DHE010

• Rohs Code:

  Yes

• Part Life Cycle Code:

  Active

• ECCN Code:

  3A001.a.2.c

• HTS Code:

  8542.32.00.51

• Manufacturer:

  Infineon Technologies AG

• YTEOL:

  8

• Access Time-Max:

  120 ns

• Command User Interface:

  YES

• Common Flash Interface:

  YES

• Data Polling:

  YES

• Data Retention Time-Min:

  20

• Endurance:

  100 Write/Erase Cycles

• JESD-30 Code:

  S-PBGA-B64

• Length:

  9 mm

• Memory Density:

  536870912 bit

• Memory IC Type:

  FLASH

• Memory Width:

  16

• Moisture Sensitivity Level:

  3

• Number of Functions:

  1

• Number of Sectors/Size:

  512

• Number of Terminals:

  64

• Number of Words:

  33554432 words

• Number of Words Code:

  32000000

• Operating Mode:

  ASYNCHRONOUS

• Operating Temperature-Max:

  125 °C

• Operating Temperature-Min:

  -55 °C

• Organization:

  32MX16

• Output Characteristics:

  3-STATE

• Package Body Material:

  PLASTIC/EPOXY

• Package Code:

  LBGA

• Package Equivalence Code:

  BGA64,8X8,40

• Package Shape:

  SQUARE

• Package Style:

  GRID ARRAY, LOW PROFILE

• Page Size:

  16 words

• Parallel/Serial:

  PARALLEL

• Peak Reflow Temperature (Cel):

  260

• Programming Voltage:

  3 V

• Ready/Busy:

  YES

• Seated Height-Max:

  1.4 mm

• Sector Size:

  64K

• Standby Current-Max:

  0.0002 A

• Supply Current-Max:

  0.06 mA

• Supply Voltage-Max (Vsup):

  3.6 V

• Supply Voltage-Min (Vsup):

  2.7 V

• Supply Voltage-Nom (Vsup):

  3 V

• Surface Mount:

  YES

• Technology:

  CMOS

• Temperature Grade:

  MILITARY

• Terminal Form:

  BALL

• Terminal Pitch:

  1 mm

• Terminal Position:

  BOTTOM

• Toggle Bit:

  YES

• Type:

  NOR TYPE

• Width:

  9 mm

• Write Cycle Time-Max (tWC):

  0.00006 ms