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SCT012H90G3AG - STMicroelectronics

Description: Automotive-grade silicon carbide Power MOSFET 900 V, 12 mΩ typ., 110 A in an H²PAK-7 package

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SCT012H90G3AG - STMicroelectronics PCB footprint - Other - Other - H2PAK-7(H=5mm)
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SCT012H90G3AG - STMicroelectronics  - 3D model - Other - H2PAK-7(H=5mm)
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SCT012H90G3AG Details

  • Manufacturer Part Number:

    SCT012H90G3AG

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Country Of Origin:

    Italy

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    32 Weeks

  • Manufacturer:

    STMicroelectronics

  • YTEOL:

    9

  • Additional Feature:

    BULK: 1000

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    900 V

  • Drain Current-Max (ID):

    110 A

  • Drain-source On Resistance-Max:

    0.0158 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    20 pF

  • JESD-30 Code:

    R-PSSO-G7

  • Number of Elements:

    1

  • Number of Terminals:

    7

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    625 W

  • Pulsed Drain Current-Max (IDM):

    454 A

  • Reference Standard:

    AEC-Q101

  • Surface Mount:

    YES

  • Terminal Form:

    GULL WING

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON CARBIDE

SCT012H90G3AG Frequently Asked Questions (FAQs)

  • STMicroelectronics provides a recommended PCB layout in their application note AN5046, which includes guidelines for thermal vias, copper pours, and component placement to minimize thermal resistance and ensure reliable operation.
  • The gate resistor value depends on the specific application, switching frequency, and gate drive voltage. A general guideline is to use a value between 1 ohm and 10 ohms. Consult the application note AN4535 for more detailed guidance on gate resistor selection.
  • The maximum allowed voltage on the gate pin is 20V, as specified in the datasheet. Exceeding this voltage can damage the device. Ensure that the gate drive voltage is within the recommended range to prevent damage.
  • To handle the high di/dt and dv/dt ratings, ensure that your design includes adequate snubber circuits, decoupling capacitors, and layout considerations to minimize parasitic inductance and capacitance. Consult the application note AN4535 for more information on designing with high di/dt and dv/dt devices.
  • The recommended operating temperature range for the SCT012H90G3AG is -40°C to 150°C. However, the device can operate up to 175°C for short periods of time. Ensure that your design takes into account the thermal management and derating requirements for the device.

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About STMicroelectronics

STMicroelectronics (ST) is a global semiconductor company that designs, manufactures, and markets a broad range of integrated circuits (ICs), discrete devices, and other electronic components. STMicroelectronics offers a diverse portfolio of semiconductor products covering a wide range of applications and industries. Their product categories include microcontrollers, analog and mixed-signal ICs, MEMS (Micro-Electro-Mechanical Systems) sensors, power management ICs, RF (Radio Frequency) transceivers, aut

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