Price & Stock for SCT012H90G3AG
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DigiKey
H2PAK-7
MANUF PART NUMBER MANUFACTURER PACK SIZE MIN ORDER QTY LEAD TIME ROHS STOCK PRICE BUY SCT012H90G3AG DISTI # 497-SCT012H90G3AGDKR-NDSTMicroelectronics Digi-Reel 1 Compliant 697
Digi-Reel®- 100 $14.33300
- 10 $15.78600
- 1 $22.01000
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DigiKey
H2PAK-7
MANUF PART NUMBER MANUFACTURER PACK SIZE MIN ORDER QTY LEAD TIME ROHS STOCK PRICE BUY SCT012H90G3AG DISTI # 497-SCT012H90G3AGCT-NDSTMicroelectronics Cut Tape 1 Compliant 697
Cut Tape- 100 $14.33300
- 10 $15.78600
- 1 $22.01000
Buy Now Download SCT012H90G3AG Model Download Datasheet -
DigiKey
H2PAK-7
MANUF PART NUMBER MANUFACTURER PACK SIZE MIN ORDER QTY LEAD TIME ROHS STOCK PRICE BUY SCT012H90G3AG DISTI # 497-SCT012H90G3AGTR-NDSTMicroelectronics Tape & Reel 1000 Compliant 0
Tape & Reel- 1000 $11.71000
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Avnet Americas
Automotive-grade silicon carbide Power MOSFET 900 V, 12 m typ., 110 A in an HPAK-7 package - Tape and Reel (Alt: SCT012H90G3AG)
MANUF PART NUMBER MANUFACTURER PACK SIZE MIN ORDER QTY LEAD TIME ROHS STOCK PRICE BUY SCT012H90G3AG DISTI # SCT012H90G3AGSTMicroelectronics Tape & Reel 1000 21 Weeks, 0 Days Not Compliant 0 - 16000 $11.24160
- 8000 $11.35515
- 4000 $11.56543
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Mouser Electronics
SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 900 V, 12 mOhm typ., 110 A in an H2PAK-7 package
MANUF PART NUMBER MANUFACTURER PACK SIZE MIN ORDER QTY LEAD TIME ROHS STOCK PRICE BUY SCT012H90G3AG DISTI # 511-SCT012H90G3AGSTMicroelectronics Compliant 49 - 1000 $13.40000
- 500 $14.33000
- 100 $14.34000
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Newark
SIC MOSFET, N-CH, 900V, 110A, H2PAK-7; MOSFET Module Configuration:Single; Channel Type:N Channel; Continuous Drain Current Id:110A; Drain Source Voltage Vds:900V; No. of Pins:7Pins; Rds(on) Test Voltage:18V; Power Dissipation:625W RoHS Compliant: Yes
MANUF PART NUMBER MANUFACTURER PACK SIZE MIN ORDER QTY LEAD TIME ROHS STOCK PRICE BUY SCT012H90G3AG DISTI # 04AM0269STMicroelectronics Cut Tape 1 Compliant 47 - 100 $15.65000
- 50 $16.18000
- 25 $16.71000
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STMicroelectronics
Automotive-grade silicon carbide Power MOSFET 900 V, 12 mOhm typ., 110 A in an H2PAK-7 package
MANUF PART NUMBER MANUFACTURER PACK SIZE MIN ORDER QTY LEAD TIME ROHS STOCK PRICE BUY SCT012H90G3AG DISTI #STMicroelectronics 1 Compliant 49 - 500 $14.05000
- 100 $14.05000
- 10 $14.47000
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TME
Transistor: N-MOSFET; SiC; unipolar; 900V; 110A; Idm: 454A; 625W
MANUF PART NUMBER MANUFACTURER PACK SIZE MIN ORDER QTY LEAD TIME ROHS STOCK PRICE BUY SCT012H90G3AG DISTI # SCT012H90G3AGSTMicroelectronics 1 Compliant 0 - 1 $52.20000
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Ameya Holding Limited
MANUF PART NUMBER MANUFACTURER PACK SIZE MIN ORDER QTY LEAD TIME ROHS STOCK PRICE BUY SCT012H90G3AG DISTI #STMicroelectronics Compliant 32746 Download SCT012H90G3AG Model Download Datasheet -
Avnet Silica
Automotivegrade silicon carbide Power MOSFET 900 V 12 m typ 110 A in an HPAK7 package (Alt: SCT012H90G3AG)
MANUF PART NUMBER MANUFACTURER PACK SIZE MIN ORDER QTY LEAD TIME ROHS STOCK PRICE BUY SCT012H90G3AG DISTI # SCT012H90G3AGSTMicroelectronics 1000 22 Weeks, 0 Days Compliant Silica - 5000 Buy Now Download SCT012H90G3AG Model Download Datasheet -
EBV Elektronik
Automotivegrade silicon carbide Power MOSFET 900 V 12 m typ 110 A in an HPAK7 package (Alt: SCT012H90G3AG)
MANUF PART NUMBER MANUFACTURER PACK SIZE MIN ORDER QTY LEAD TIME ROHS STOCK PRICE BUY SCT012H90G3AG DISTI # SCT012H90G3AGSTMicroelectronics 1000 22 Weeks, 0 Days Compliant EBV - 0 Download SCT012H90G3AG Model Download Datasheet