SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR
Gate-Emitter Thr Voltage-Max:
6.5 V
Gate-Emitter Voltage-Max:
20 V
JESD-30 Code:
R-XUFM-X20
Number of Elements:
2
Number of Terminals:
20
Operating Temperature-Max:
175 °C
Operating Temperature-Min:
-40 °C
Package Body Material:
UNSPECIFIED
Package Shape:
RECTANGULAR
Package Style:
FLANGE MOUNT
Peak Reflow Temperature (Cel):
NOT SPECIFIED
Polarity/Channel Type:
N-CHANNEL
Qualification Status:
Not Qualified
Reference Standard:
IEC-60747-1; UL RECOGNIZED
Surface Mount:
NO
Terminal Form:
UNSPECIFIED
Terminal Position:
UPPER
Time@Peak Reflow Temperature-Max (s):
NOT SPECIFIED
Transistor Application:
POWER CONTROL
Transistor Element Material:
SILICON
Turn-off Time-Nom (toff):
663 ns
Turn-on Time-Nom (ton):
312 ns
VCEsat-Max:
2.05 V
SEMIX303GB12E4S Frequently Asked Questions (FAQs)
SEMIKRON recommends a PCB layout with a large copper area for heat dissipation, and a minimum of 2 oz copper thickness. The layout should also ensure good thermal conduction between the module and the heat sink.
SEMIKRON recommends conformal coating the module and ensuring good sealing of the module's encapsulation to prevent moisture ingress. Additionally, the module should be stored in a dry environment before installation.
SEMIKRON recommends a maximum voltage imbalance of 10% between the DC-link capacitors to ensure reliable operation and prevent premature aging of the capacitors.
Yes, the SEMIX303GB12E4S can be used in a parallel configuration, but it requires careful design and implementation to ensure proper current sharing and thermal management. SEMIKRON recommends consulting their application notes and seeking expert advice for parallel configuration design.
SEMIKRON recommends a gate resistor value between 10 ohms and 20 ohms for optimal switching performance and to prevent oscillations. However, the optimal value may vary depending on the specific application and circuit design.
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SEMIX303GB12E4S Overview
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