SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR
Gate-Emitter Thr Voltage-Max:
6.5 V
Gate-Emitter Voltage-Max:
20 V
JESD-30 Code:
R-XUFM-X23
Number of Elements:
2
Number of Terminals:
23
Operating Temperature-Max:
175 °C
Operating Temperature-Min:
-40 °C
Package Body Material:
UNSPECIFIED
Package Shape:
RECTANGULAR
Package Style:
FLANGE MOUNT
Peak Reflow Temperature (Cel):
NOT SPECIFIED
Polarity/Channel Type:
N-CHANNEL
Qualification Status:
Not Qualified
Reference Standard:
IEC-60747-1; UL RECOGNIZED
Surface Mount:
NO
Terminal Form:
UNSPECIFIED
Terminal Position:
UPPER
Time@Peak Reflow Temperature-Max (s):
NOT SPECIFIED
Transistor Application:
POWER CONTROL
Transistor Element Material:
SILICON
Turn-off Time-Nom (toff):
1391 ns
Turn-on Time-Nom (ton):
459 ns
VCEsat-Max:
2.05 V
SEMiX604GB12E4s Frequently Asked Questions (FAQs)
The maximum operating temperature range for the SEMIX604GB12E4S is -40°C to 150°C, with a junction temperature (Tj) of up to 150°C.
Proper thermal management can be achieved by ensuring good heat sinking, using a thermal interface material (TIM) with a thermal conductivity of at least 1 W/mK, and maintaining a maximum junction temperature (Tj) of 150°C.
The recommended gate resistance for the SEMIX604GB12E4S is between 10 ohms and 100 ohms, depending on the specific application and switching frequency.
Yes, the SEMIX604GB12E4S can be used in parallel configurations, but it is essential to ensure that the devices are properly matched and that the gate drive circuits are designed to handle the increased current and voltage requirements.
The maximum allowed dv/dt for the SEMIX604GB12E4S is 10 kV/μs, but it is recommended to limit dv/dt to 5 kV/μs or less to ensure reliable operation and minimize electromagnetic interference (EMI).
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