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SI1012CR-T1-GE3 - Vishay

Description: Vishay SI1012CR-T1-GE3 N-Channel MOSFET, 630 mA, 20 V, 3-Pin SOT-416

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SI1012CR-T1-GE3 - Vishay - PCB symbol
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PCB Footprints
SI1012CR-T1-GE3 - Vishay PCB footprint - SOT23 (3-Pin) - SOT23 (3-Pin) - SI1012CR-T1-GE3
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3D Models
SI1012CR-T1-GE3 - Vishay - 3D model - SOT23 (3-Pin) - SI1012CR-T1-GE3
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SI1012CR-T1-GE3 Details

  • Manufacturer Part Number:

    SI1012CR-T1-GE3

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Package Description:

    SC-75, 3 PIN

  • Country Of Origin:

    Germany

  • ECCN Code:

    EAR99

  • Manufacturer:

    Vishay Intertechnologies

  • YTEOL:

    7

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    20 V

  • Drain Current-Max (ID):

    0.63 A

  • Drain-source On Resistance-Max:

    0.396 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JESD-30 Code:

    R-PDSO-G3

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    0.24 W

  • Surface Mount:

    YES

  • Terminal Finish:

    MATTE TIN

  • Terminal Form:

    GULL WING

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

SI1012CR-T1-GE3 Frequently Asked Questions (FAQs)

  • The recommended land pattern for the SI1012CR-T1-GE3 can be found in the Vishay Intertechnologies' application note 'Land Pattern Recommendations for Vishay's Chip Resistors' (document number 31011).
  • Vishay Intertechnologies recommends following the J-STD-020D.1 standard for soldering and rework of the SI1012CR-T1-GE3. Additionally, the company provides a 'Soldering and Rework Guidelines' document (document number 31013) that provides more detailed information.
  • The maximum allowed voltage for the SI1012CR-T1-GE3 is 200 V. However, it's essential to note that the voltage rating may vary depending on the specific application and operating conditions. It's recommended to consult with a Vishay Intertechnologies' representative or a qualified engineer to determine the suitable voltage rating for a specific use case.
  • The SI1012CR-T1-GE3 is rated for operation up to 155°C. However, it's crucial to consider the derating curves and thermal management strategies to ensure reliable operation in high-temperature applications. Consult the datasheet and application notes for more information.
  • Vishay Intertechnologies recommends following the guidelines outlined in the 'EMI and RFI Considerations for Vishay's Chip Resistors' application note (document number 31014). Additionally, it's essential to consult with a qualified engineer or a Vishay Intertechnologies' representative to determine the suitable EMI and RFI mitigation strategies for a specific application.

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SI1012CR-T1-GE3 Overview

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