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SI1012R-T1-GE3 - Vishay

Description: MOSFET 20V 0.6A 175mW 700mohm @ 4.5V

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Symbol
SI1012R-T1-GE3 - Vishay - PCB symbol
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PCB Footprints
SI1012R-T1-GE3 - Vishay PCB footprint - SOT23 (3-Pin) - SOT23 (3-Pin) - SC-75A
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3D Models
SI1012R-T1-GE3 - Vishay - 3D model - SOT23 (3-Pin) - SC-75A
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SI1012R-T1-GE3 Details

  • Manufacturer Part Number:

    SI1012R-T1-GE3

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Package Description:

    HALOGEN FREE AND ROHS COMPLIANT, SC-75A, 3 PIN

  • ECCN Code:

    EAR99

  • Manufacturer:

    Vishay Intertechnologies

  • YTEOL:

    0

  • Additional Feature:

    LOW THRESHOLD

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    20 V

  • Drain Current-Max (ID):

    0.5 A

  • Drain-source On Resistance-Max:

    0.7 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JESD-30 Code:

    R-PDSO-G3

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    0.175 W

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    MATTE TIN

  • Terminal Form:

    GULL WING

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

SI1012R-T1-GE3 Frequently Asked Questions (FAQs)

  • The recommended PCB footprint for the SI1012R-T1-GE3 is a standard 0603 package with a land pattern of 0.8 mm x 0.8 mm. It's essential to follow the recommended footprint to ensure proper soldering and thermal performance.
  • To ensure reliability in high-temperature applications, it's crucial to follow the recommended derating guidelines for the SI1012R-T1-GE3. This includes reducing the power rating as the ambient temperature increases. Additionally, ensure proper thermal management, such as using a heat sink or thermal interface material, to keep the junction temperature within the recommended range.
  • The maximum allowable voltage for the SI1012R-T1-GE3 is 100 V. Exceeding this voltage may damage the device or affect its reliability. It's essential to ensure that the voltage rating is not exceeded in the application.
  • To prevent damage during storage and shipping, it's recommended to store the SI1012R-T1-GE3 in its original packaging or a similar ESD-protective package. Avoid exposing the device to extreme temperatures, humidity, or physical stress. Handle the devices by the body, avoiding touching the leads or electrical contacts.
  • The recommended soldering profile for the SI1012R-T1-GE3 is a peak temperature of 260°C (500°F) for a maximum of 10 seconds. It's essential to follow a controlled soldering process to prevent thermal damage to the device.

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SI1012R-T1-GE3 Overview

Use the download button to access the SI1012R-T1-GE3 schematic symbol, PCB footprint, and 3D model.
To find more CAD model downloads similar to this part, try a partial part number search, like SI101, or try a keyword search, such as Small Signal Field-Effect Transistors

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Small Signal Field-Effect Transistor, 0.5A I(D), 20V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET