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SI1013R-T1-GE3 - Vishay

Description: MOSFET P Trench 20V 350mA 450mV @ 250uA(Min) 1.2 Ω @ 350mA,4.5V SC-75A RoHS

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PCB Footprints
SI1013R-T1-GE3 - Vishay PCB footprint - SOT23 (3-Pin) - SOT23 (3-Pin) - SC-75A-1
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3D Models
SI1013R-T1-GE3 - Vishay  - 3D model - SOT23 (3-Pin) - SC-75A-1
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SI1013R-T1-GE3 Details

  • Manufacturer Part Number:

    SI1013R-T1-GE3

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Package Description:

    SC-75A, 3 PIN

  • ECCN Code:

    EAR99

  • Manufacturer:

    Vishay Intertechnologies

  • YTEOL:

    0

  • Additional Feature:

    LOW THRESHOLD

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    20 V

  • Drain Current-Max (ID):

    0.35 A

  • Drain-source On Resistance-Max:

    1.2 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JESD-30 Code:

    R-PDSO-G3

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    P-CHANNEL

  • Power Dissipation-Max (Abs):

    0.175 W

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    MATTE TIN

  • Terminal Form:

    GULL WING

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

SI1013R-T1-GE3 Frequently Asked Questions (FAQs)

  • The recommended PCB footprint for the SI1013R-T1-GE3 is a standard 0603 package with a land pattern of 0.8 mm x 0.8 mm. It's essential to follow the recommended footprint to ensure proper soldering and thermal performance.
  • To ensure the SI1013R-T1-GE3 operates within its SOA, monitor the device's junction temperature, voltage, and current. Keep the junction temperature below 150°C, voltage within the specified range, and current below the maximum rated value. Also, ensure proper thermal management and heat dissipation.
  • Store the SI1013R-T1-GE3 in a dry, cool place, away from direct sunlight and moisture. The recommended storage temperature range is -40°C to 100°C, and the relative humidity should be below 60%. Avoid exposing the device to mechanical stress, vibration, or extreme temperatures.
  • Yes, the SI1013R-T1-GE3 is suitable for high-reliability and automotive applications. It meets the requirements of AEC-Q101 and is qualified for use in automotive systems. However, ensure you follow the recommended design and testing guidelines for your specific application.
  • Handle the SI1013R-T1-GE3 with care during soldering and rework. Avoid exposing the device to excessive heat, moisture, or mechanical stress. Follow the recommended soldering profile, and use a soldering iron with a temperature below 260°C. For rework, use a low-temperature soldering iron and a gentle touch to avoid damaging the device.

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SI1013R-T1-GE3 Overview

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