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SI1023X-T1-GE3 - Vishay

Description: MOSFET Dual P-Ch MOSFET 20V 1.2 ohms @ 4.5V

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PCB Footprints
SI1023X-T1-GE3 - Vishay PCB footprint - SO Transistor Flat Lead - SO Transistor Flat Lead - SC-89 6-Leads (SOT-563F)
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3D Models
SI1023X-T1-GE3 - Vishay  - 3D model - SO Transistor Flat Lead - SC-89 6-Leads (SOT-563F)
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SI1023X-T1-GE3 Details

  • Manufacturer Part Number:

    SI1023X-T1-GE3

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Package Description:

    HALOGEN FREE AND ROHS COMPLIANT, SC-89, 6 PIN

  • ECCN Code:

    EAR99

  • Manufacturer:

    Vishay Intertechnologies

  • YTEOL:

    0

  • Additional Feature:

    LOW THRESHOLD

  • Configuration:

    SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    20 V

  • Drain Current-Max (ID):

    0.37 A

  • Drain-source On Resistance-Max:

    1.2 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JESD-30 Code:

    R-PDSO-F6

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    2

  • Number of Terminals:

    6

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    P-CHANNEL

  • Power Dissipation-Max (Abs):

    0.28 W

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    MATTE TIN

  • Terminal Form:

    FLAT

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

SI1023X-T1-GE3 Frequently Asked Questions (FAQs)

  • A recommended PCB layout for optimal thermal performance would be to use a large copper pad under the device, connected to a thermal via or a thermal pad, and to use a thermal relief pattern to minimize thermal resistance.
  • To ensure reliable soldering, use a soldering profile with a peak temperature of 240°C to 250°C, and a dwell time of 30-60 seconds. Also, use a solder with a melting point above 217°C to prevent solder joint fatigue.
  • The maximum allowed voltage on the gate pin is ±20V, but it's recommended to keep it within ±15V to ensure reliable operation and prevent damage to the device.
  • To protect the device from ESD, handle the device by the body or the pins, use an ESD wrist strap or mat, and store the device in an anti-static bag or container. Also, ensure that the PCB has ESD protection components, such as TVS diodes or ESD protection arrays.
  • The recommended operating frequency range for the SI1023X-T1-GE3 is up to 100 kHz, but it can be used up to 1 MHz with proper PCB layout and thermal management.

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SI1023X-T1-GE3 Overview

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Part Image SI1023X-T1-E3 Vishay Siliconix

Small Signal Field-Effect Transistor, 0.37A I(D), 20V, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET

Part Image SI1023X-T1-GE3 Vishay Siliconix

Small Signal Field-Effect Transistor, 0.37A I(D), 20V, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET