Part Image

SI1024X-T1-GE3 - Vishay

Description: MOSFET Dual N-Ch MOSFET 20V 700 mohms @ 4.5V

Download SI1024X-T1-GE3 Model
Schematic
symbols
Schematic symbol is unavailable for download
PCB
footprints
PCB footprint is unavailable for download
3D
models
3D model is unavailable for download
PCB Footprints
SI1024X-T1-GE3 - Vishay PCB footprint - SOT23 (6-Pin) - SOT23 (6-Pin) - SC-89 6-Leads (SOT-563F)
click to zoom

SI1024X-T1-GE3 Details

  • Manufacturer Part Number:

    SI1024X-T1-GE3

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Package Description:

    HALOGEN FREE AND ROHS COMPLIANT, SC-89, 6 PIN

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    68 Weeks

  • Manufacturer:

    Vishay Intertechnologies

  • YTEOL:

    0

  • Additional Feature:

    LOW THRESHOLD

  • Configuration:

    SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE AND RESISTOR

  • DS Breakdown Voltage-Min:

    20 V

  • Drain Current-Max (ID):

    0.485 A

  • Drain-source On Resistance-Max:

    0.7 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JESD-30 Code:

    R-PDSO-F6

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    2

  • Number of Terminals:

    6

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    0.25 W

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    MATTE TIN

  • Terminal Form:

    FLAT

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

SI1024X-T1-GE3 Frequently Asked Questions (FAQs)

  • The recommended PCB footprint for the SI1024X-T1-GE3 is a rectangular pad with a size of 1.3 mm x 0.8 mm, with a 0.5 mm radius corner. The pad should be centered on the component and have a solder mask defined (SMD) pad shape.
  • The SI1024X-T1-GE3 has a thermal resistance of 12.5°C/W. To manage thermal performance, ensure good airflow around the component, use a thermal interface material (TIM) with a thermal conductivity of at least 1 W/m-K, and consider using a heat sink or thermal pad.
  • The SI1024X-T1-GE3 has an operating temperature range of -55°C to 150°C. However, the device's performance and reliability may degrade if operated at the extreme ends of this range for extended periods.
  • The SI1024X-T1-GE3 is a commercial-grade component and may not meet the stringent requirements of high-reliability or aerospace applications. For such applications, consider using a component with a higher qualification level, such as a MIL-PRF-19500 or ESCC-qualified device.
  • To ensure proper soldering, use a soldering iron with a temperature of 260°C to 280°C, and apply a solder paste with a melting point of 217°C to 221°C. The component should be placed on the PCB with a soldering time of 2-3 seconds per pin.

Trust Checks

This model has been provided by community users.
Community Provided
This model has been verified by system checks.
System Verified
This model has been reviewed by community users.
Community Approved
Sponsored

SI1024X-T1-GE3 Overview

Use the download button to access the SI1024X-T1-GE3 schematic symbol and PCB footprint.
To find more CAD model downloads similar to this part, try a partial part number search, like SI102, or try a keyword search, such as Small Signal Field-Effect Transistors

Parts related to SI1024X-T1-GE3

Showing 0 results

SI1024X-T1-GE3 Alternates

Showing results

Image Part Number Model
Part Image SI1024X-T1-GE3 Vishay Siliconix

Small Signal Field-Effect Transistor, 0.485A I(D), 20V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET