HALOGEN FREE AND ROHS COMPLIANT, MINIATURE, SC-89, 6 PIN
ECCN Code:
EAR99
Factory Lead Time:
8 Weeks
Manufacturer:
Vishay Intertechnologies
YTEOL:
0
Additional Feature:
LOW THRESHOLD
Configuration:
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
DS Breakdown Voltage-Min:
60 V
Drain Current-Max (ID):
0.305 A
Drain-source On Resistance-Max:
1.4 Ω
FET Technology:
METAL-OXIDE SEMICONDUCTOR
JESD-30 Code:
R-PDSO-F6
JESD-609 Code:
e3
Moisture Sensitivity Level:
1
Number of Elements:
2
Number of Terminals:
6
Operating Mode:
ENHANCEMENT MODE
Operating Temperature-Max:
150 °C
Package Body Material:
PLASTIC/EPOXY
Package Shape:
RECTANGULAR
Package Style:
SMALL OUTLINE
Peak Reflow Temperature (Cel):
260
Polarity/Channel Type:
N-CHANNEL
Power Dissipation-Max (Abs):
0.28 W
Qualification Status:
Not Qualified
Surface Mount:
YES
Terminal Finish:
Matte Tin (Sn)
Terminal Form:
FLAT
Terminal Position:
DUAL
Time@Peak Reflow Temperature-Max (s):
30
Transistor Application:
SWITCHING
Transistor Element Material:
SILICON
SI1026X-T1-GE3 Frequently Asked Questions (FAQs)
The recommended PCB footprint for the SI1026X-T1-GE3 is a standard SOT23-6 package with a 1.3mm x 1.3mm body size and a 0.5mm pitch. The datasheet provides a recommended land pattern and soldering guidelines.
To ensure reliability in high-temperature applications, follow the recommended operating conditions and derating guidelines in the datasheet. Additionally, consider using a thermal pad or heat sink to dissipate heat, and ensure good airflow around the device.
The maximum allowed voltage on the enable pin (EN) of the SI1026X-T1-GE3 is the same as the maximum supply voltage (VIN), which is 6.5V. Exceeding this voltage may damage the device.
Yes, the SI1026X-T1-GE3 is suitable for switching regulator applications due to its high-frequency capability and low RDS(on). However, ensure that the device is properly bypassed and decoupled to minimize noise and voltage spikes.
To calculate the power dissipation of the SI1026X-T1-GE3, use the equation: Pd = (VIN x IIN) + (VDS x IDS). Where VIN is the input voltage, IIN is the input current, VDS is the drain-source voltage, and IDS is the drain-source current. Refer to the datasheet for thermal resistance and junction-to-ambient thermal resistance values.
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SI1026X-T1-GE3 Overview
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