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SI1028X-T1-GE3 - Vishay

Description: Vishay SI1028X-T1-GE3 Dual N-channel MOSFET, 480 mA, 30 V, 6-Pin SOT-523

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SI1028X-T1-GE3 - Vishay PCB footprint - SO Transistor Flat Lead - SO Transistor Flat Lead - SI1028X-T1-GE3-1
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SI1028X-T1-GE3 - Vishay  - 3D model - SO Transistor Flat Lead - SI1028X-T1-GE3-1
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SI1028X-T1-GE3 Details

  • Manufacturer Part Number:

    SI1028X-T1-GE3

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Package Description:

    SC-89, SOT-563F, 6 PIN

  • ECCN Code:

    EAR99

  • Manufacturer:

    Vishay Intertechnologies

  • YTEOL:

    0

  • Configuration:

    SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    30 V

  • Drain-source On Resistance-Max:

    0.65 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JESD-30 Code:

    R-PDSO-F6

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    2

  • Number of Terminals:

    6

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    0.22 W

  • Surface Mount:

    YES

  • Terminal Finish:

    MATTE TIN

  • Terminal Form:

    FLAT

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

SI1028X-T1-GE3 Frequently Asked Questions (FAQs)

  • A recommended PCB layout for optimal thermal performance would be to use a large copper pad under the device, connected to a solid ground plane, and to use thermal vias to dissipate heat. Additionally, keeping the PCB layer stack-up symmetrical and using a thermal interface material (TIM) can help improve thermal performance.
  • To ensure reliable operation in high-temperature environments, it's essential to follow proper thermal design and layout guidelines, use a suitable thermal interface material (TIM), and ensure good airflow around the device. Additionally, consider derating the device's power dissipation according to the ambient temperature and using a heat sink if necessary.
  • Although the datasheet doesn't explicitly state the maximum allowed voltage on the gate-source pin, it's generally recommended to keep the gate-source voltage within ±20V to prevent damage to the device.
  • To protect the device from electrostatic discharge (ESD), follow proper handling and storage procedures, use ESD-safe materials and equipment, and consider adding ESD protection devices, such as TVS diodes or ESD arrays, to the circuit design.
  • The recommended gate drive voltage and current for optimal switching performance depend on the specific application and requirements. However, as a general guideline, a gate drive voltage of 10-15V and a current of 1-2A are commonly used for this device.

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SI1028X-T1-GE3 Overview

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