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SI1032R-T1-GE3 - Vishay

Description: MOSFET 20V 200mA 280mW 5.0ohm @ 4.5V

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SI1032R-T1-GE3 - Vishay - PCB symbol
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PCB Footprints
SI1032R-T1-GE3 - Vishay PCB footprint - SOT23 (3-Pin) - SOT23 (3-Pin) - SC-75A: 3 Leads
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3D Models
SI1032R-T1-GE3 - Vishay - 3D model - SOT23 (3-Pin) - SC-75A: 3 Leads
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SI1032R-T1-GE3 Details

  • Manufacturer Part Number:

    SI1032R-T1-GE3

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Package Description:

    HALOGEN FREE AND ROHS COMPLIANT, SC-75A, 3 PIN

  • ECCN Code:

    EAR99

  • Manufacturer:

    Vishay Intertechnologies

  • YTEOL:

    0

  • Additional Feature:

    LOW THRESHOLD

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    20 V

  • Drain Current-Max (ID):

    0.14 A

  • Drain-source On Resistance-Max:

    5 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JESD-30 Code:

    R-PDSO-G3

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    0.28 W

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    MATTE TIN

  • Terminal Form:

    GULL WING

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

SI1032R-T1-GE3 Frequently Asked Questions (FAQs)

  • The recommended PCB footprint for the SI1032R-T1-GE3 is a standard SOT23-3L package with a 1.3mm x 1.3mm body size. A minimum pad size of 0.8mm x 0.8mm is recommended for reliable soldering.
  • To ensure the SI1032R-T1-GE3 operates within its recommended operating conditions, maintain a voltage supply between 2.7V and 5.5V, and keep the junction temperature (Tj) below 150°C. Also, ensure the device is operated within its specified frequency range.
  • The maximum allowable power dissipation for the SI1032R-T1-GE3 is 250mW. Exceeding this limit may cause the device to overheat, leading to reduced performance or even failure.
  • To prevent electrostatic discharge (ESD) damage, handle the SI1032R-T1-GE3 with an ESD wrist strap or mat, and ensure the workspace is ESD-protected. Avoid touching the device's pins or exposing it to static electricity.
  • Store the SI1032R-T1-GE3 in a dry, cool place with a temperature range of -40°C to 125°C. Avoid exposing the device to moisture, direct sunlight, or extreme temperatures.

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SI1032R-T1-GE3 Overview

Use the download button to access the SI1032R-T1-GE3 schematic symbol, PCB footprint, and 3D model.
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