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SI1032X-T1-GE3 - Vishay

Description: Trans MOSFET N-CH 20V 0.2A 3-Pin Vishay SI1032X-T1-GE3 N-channel MOSFET Transistor, 0.2 A, 20 V, 3-Pin SC-75A

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PCB Footprints
SI1032X-T1-GE3 - Vishay PCB footprint - SO Transistor Flat Lead - SO Transistor Flat Lead - SC89-3
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3D Models
SI1032X-T1-GE3 - Vishay  - 3D model - SO Transistor Flat Lead - SC89-3
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SI1032X-T1-GE3 Details

  • Manufacturer Part Number:

    SI1032X-T1-GE3

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Package Description:

    HALOGEN FREE AND ROHS COMPLIANT, SC-89, 3 PIN

  • ECCN Code:

    EAR99

  • Manufacturer:

    Vishay Intertechnologies

  • YTEOL:

    0

  • Additional Feature:

    LOW THRESHOLD

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    20 V

  • Drain Current-Max (ID):

    0.2 A

  • Drain-source On Resistance-Max:

    5 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JESD-30 Code:

    R-PDSO-F3

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    0.34 W

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn)

  • Terminal Form:

    FLAT

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

SI1032X-T1-GE3 Frequently Asked Questions (FAQs)

  • Vishay recommends a PCB layout with a thermal pad connected to a large copper area on the PCB to dissipate heat efficiently. A minimum of 2 oz copper thickness is recommended, and the thermal pad should be connected to a heat sink or a large copper plane.
  • To ensure reliable operation in high-temperature environments, it's essential to follow proper thermal management practices, such as providing adequate heat sinking, using a thermally conductive interface material, and keeping the device within its specified operating temperature range.
  • The maximum allowed voltage stress on the SI1032X-T1-GE3 is 1.5 times the maximum rated voltage (VR) for a maximum duration of 100 ms. Exceeding this limit can cause permanent damage to the device.
  • To prevent electrostatic discharge (ESD) damage, handle the device with ESD-protective equipment, such as wrist straps or mats, and ensure that the device is stored in ESD-protective packaging. During assembly, use ESD-protected workstations and follow proper ESD-handling procedures.
  • Vishay recommends a soldering profile with a peak temperature of 260°C (500°F) for a maximum of 10 seconds. The device should be soldered using a solder with a melting point above 217°C (423°F).

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SI1032X-T1-GE3 Overview

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