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SI1034X-T1-GE3 - Vishay

Description: MOSFET Dual N-Ch MOSFET 20V 5.0 ohms @ 4.5V

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PCB Footprints
SI1034X-T1-GE3 - Vishay PCB footprint - SO Transistor Flat Lead - SO Transistor Flat Lead - SC89: 6-LEADS (SOT-563F)_1
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3D Models
SI1034X-T1-GE3 - Vishay  - 3D model - SO Transistor Flat Lead - SC89: 6-LEADS (SOT-563F)_1
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SI1034X-T1-GE3 Details

  • Manufacturer Part Number:

    SI1034X-T1-GE3

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Package Description:

    HALOGEN FREE AND ROHS COMPLIANT, SC-89, 6 PIN

  • ECCN Code:

    EAR99

  • Manufacturer:

    Vishay Intertechnologies

  • YTEOL:

    0

  • Additional Feature:

    LOW THRESHOLD

  • Configuration:

    SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    20 V

  • Drain Current-Max (ID):

    0.18 A

  • Drain-source On Resistance-Max:

    5 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JESD-30 Code:

    R-PDSO-F6

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    2

  • Number of Terminals:

    6

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    0.28 W

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    MATTE TIN

  • Terminal Form:

    FLAT

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

SI1034X-T1-GE3 Frequently Asked Questions (FAQs)

  • The recommended PCB footprint for the SI1034X-T1-GE3 is a standard 0603 package with a land pattern of 0.9mm x 0.5mm. It's essential to follow the recommended footprint to ensure proper soldering and thermal performance.
  • To ensure the SI1034X-T1-GE3 operates within its SOA, monitor the device's voltage, current, and power dissipation. Keep the voltage below the maximum rating (30V), current below the maximum rating (1A), and power dissipation below the maximum rating (0.5W). Also, ensure proper thermal management and heat sinking.
  • Store the SI1034X-T1-GE3 in a dry, cool place, away from direct sunlight and moisture. The recommended storage temperature range is -40°C to 125°C, and the relative humidity should be below 60%. Avoid exposing the device to mechanical stress, vibration, or extreme temperatures.
  • Yes, the SI1034X-T1-GE3 is suitable for high-reliability applications. It's built with a robust design and undergoes rigorous testing to ensure its performance and longevity. However, it's essential to follow proper design, manufacturing, and testing procedures to ensure the device meets the required reliability standards.
  • Handle the SI1034X-T1-GE3 by the body, avoiding touching the leads or electrical contacts. Use anti-static wrist straps, mats, or other ESD protection devices to prevent electrostatic discharge damage. Follow standard soldering procedures, and avoid overheating or applying excessive force during assembly.

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SI1034X-T1-GE3 Overview

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