Please enter a minimum 3 letters or numbers
Technical Content
Part Image

SI1300BDL-T1-E3 - Vishay

Description: SI1300BDL-T1-E3, N-channel MOSFET Transistor 0.37 A 20 V, 3-Pin SC-70

Download SI1300BDL-T1-E3 Model
Schematic
symbols
Schematic symbol is unavailable for download
PCB
footprints
PCB footprint is unavailable for download
3D
models
3D model is unavailable for download
Send part feedback
Symbol
SI1300BDL-T1-E3 - Vishay - PCB symbol
click to zoom
PCB Footprints
SI1300BDL-T1-E3 - Vishay PCB footprint - SOT23 (3-Pin) - SOT23 (3-Pin) - SC-70(3LEADS) (old)
click to zoom
3D Models
SI1300BDL-T1-E3 - Vishay - 3D model - SOT23 (3-Pin) - SC-70(3LEADS) (old)
click to zoom

SI1300BDL-T1-E3 Details

  • Manufacturer Part Number:

    SI1300BDL-T1-E3

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Package Description:

    SC-70, 3 PIN

  • ECCN Code:

    EAR99

  • Manufacturer:

    Vishay Intertechnologies

  • YTEOL:

    0

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    20 V

  • Drain Current-Max (ID):

    0.4 A

  • Drain-source On Resistance-Max:

    0.85 Ω

  • FET Technology:

    TRENCH MOSFET

  • Feedback Cap-Max (Crss):

    4 pF

  • JESD-30 Code:

    R-PDSO-G3

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    0.2 W

  • Pulsed Drain Current-Max (IDM):

    0.5 A

  • Qualification Status:

    Not Qualified

  • Reference Standard:

    IEC-61249-2-21

  • Surface Mount:

    YES

  • Terminal Finish:

    MATTE TIN

  • Terminal Form:

    GULL WING

  • Terminal Position:

    DUAL

  • Transistor Element Material:

    SILICON

  • Turn-off Time-Max (toff):

    25 ns

  • Turn-on Time-Max (ton):

    27 ns

SI1300BDL-T1-E3 Frequently Asked Questions (FAQs)

  • The recommended PCB footprint for the SI1300BDL-T1-E3 is a 5-pin SOT23 package with a minimum pad size of 1.3 mm x 1.3 mm and a thermal pad size of 2.5 mm x 2.5 mm.
  • To ensure proper soldering, use a soldering iron with a temperature of 260°C (500°F) and a solder with a melting point of 217°C (423°F). Apply a small amount of solder to the pins and reflow according to the recommended soldering profile.
  • The maximum operating temperature range for the SI1300BDL-T1-E3 is -55°C to 150°C (-69°F to 302°F). However, the device is typically specified for operation up to 125°C (257°F).
  • To prevent electrostatic discharge (ESD) damage, handle the SI1300BDL-T1-E3 with an ESD wrist strap or mat, and ensure the PCB has ESD protection components such as TVS diodes or ESD protection arrays.
  • Store the SI1300BDL-T1-E3 in a dry, cool place with a relative humidity of 60% or less. Avoid exposing the device to direct sunlight, moisture, or extreme temperatures.

Trust Checks

This model has been provided by community users.
Community Provided
This model has been verified by system checks.
System Verified
This model has been reviewed by community users.
Community Approved
Sponsored

SI1300BDL-T1-E3 Overview

Use the download button to access the SI1300BDL-T1-E3 schematic symbol, PCB footprint, and 3D model.
To find more CAD model downloads similar to this part, try a partial part number search, like SI130, or try a keyword search, such as Power Field-Effect Transistors

Parts related to SI1300BDL-T1-E3

Showing 0 results

Part Image

← Prev Next →
About Us Contact Us Terms of Service Do not sell or share my personal information Privacy Policy Digital Services Act Library Loader Twitter LinkedIn

All content Copyright © 2020, Supplyframe.com. All rights reserved. Back to top ↑

SI1300BDL-T1-E3 Alternates

Showing results

Image Part Number Model
Part Image SI1300BDL-T1-GE3 Vishay Intertechnologies

Power Field-Effect Transistor, 0.4A I(D), 20V, 0.85ohm, 1-Element, N-Channel, Silicon, Trench Mosfet FET