Part Image

Si1308EDL-T1-GE3 - Vishay

Description: MOSFET N-Ch 30V 1.5A TrenchFET SC70 Vishay Si1308EDL-T1-GE3 N-channel MOSFET Transistor, 1.5 A, 30 V, 3-Pin SC-70

Download Si1308EDL-T1-GE3 Model
Schematic
symbols
Schematic symbol is unavailable for download
PCB
footprints
PCB footprint is unavailable for download
3D
models
3D model is unavailable for download
PCB Footprints
Si1308EDL-T1-GE3 - Vishay PCB footprint - SOT23 (3-Pin) - SOT23 (3-Pin) - SC-70_3LEADS
click to zoom
3D Models
Si1308EDL-T1-GE3 - Vishay  - 3D model - SOT23 (3-Pin) - SC-70_3LEADS
click to zoom

Si1308EDL-T1-GE3 Details

  • Manufacturer Part Number:

    SI1308EDL-T1-GE3

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Package Description:

    SOT-323, SC-70, 3 PIN

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    8 Weeks

  • Manufacturer:

    Vishay Intertechnologies

  • YTEOL:

    6.9

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    30 V

  • Drain Current-Max (ID):

    1.4 A

  • Drain-source On Resistance-Max:

    0.132 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    11 pF

  • JESD-30 Code:

    R-PDSO-G3

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    0.5 W

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn)

  • Terminal Form:

    GULL WING

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

Si1308EDL-T1-GE3 Frequently Asked Questions (FAQs)

  • The recommended PCB footprint for the SI1308EDL-T1-GE3 is a standard SOT23-6 package with a 1.6mm x 1.6mm body size. A minimum pad size of 0.8mm x 0.8mm is recommended for reliable soldering.
  • To ensure proper biasing, connect the input pin (VIN) to a stable voltage source between 2.5V to 5.5V, and the enable pin (EN) to a logic-level signal (0V or VIN). The output pin (VOUT) should be decoupled with a 1uF ceramic capacitor to ensure stability.
  • The SI1308EDL-T1-GE3 is rated for operation in an ambient temperature range of -40°C to +125°C. However, the device's performance and reliability may degrade at extreme temperatures.
  • Yes, the SI1308EDL-T1-GE3 is AEC-Q100 qualified and suitable for high-reliability and automotive applications. However, it's essential to follow the recommended operating conditions and design guidelines to ensure the device meets the specific application requirements.
  • To prevent ESD damage, handle the SI1308EDL-T1-GE3 with an anti-static wrist strap or mat, and ensure the PCB is properly grounded. Avoid touching the device's pins or handling the device in environments with high electrostatic potential.

Trust Checks

This model has been provided by community users.
Community Provided
This model has been verified by system checks.
System Verified
This model has been reviewed by community users.
Community Approved
Sponsored

Si1308EDL-T1-GE3 Overview

Use the download button to access the Si1308EDL-T1-GE3 schematic symbol, PCB footprint, and 3D model.
To find more CAD model downloads similar to this part, try a partial part number search, like Si130, or try a keyword search, such as Small Signal Field-Effect Transistors

Parts related to Si1308EDL-T1-GE3

Showing 0 results