Part Image

SI1317DL-T1-GE3 - Vishay

Description: Vishay SI1317DL-T1-GE3 P-channel MOSFET Transistor, 1.1 A, -20 V, 3-Pin SOT-323

Download SI1317DL-T1-GE3 Model
Schematic
symbols
Schematic symbol is unavailable for download
PCB
footprints
PCB footprint is unavailable for download
3D
models
3D model is unavailable for download
PCB Footprints
SI1317DL-T1-GE3 - Vishay PCB footprint - SOT23 (3-Pin) - SOT23 (3-Pin) - SC-70: 3-LEQADS
click to zoom
3D Models
SI1317DL-T1-GE3 - Vishay  - 3D model - SOT23 (3-Pin) - SC-70: 3-LEQADS
click to zoom

SI1317DL-T1-GE3 Details

  • Manufacturer Part Number:

    SI1317DL-T1-GE3

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Package Description:

    SC-70, SOT-323, 3 PIN

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    19 Weeks

  • Manufacturer:

    Vishay Intertechnologies

  • YTEOL:

    7

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    20 V

  • Drain Current-Max (ID):

    1.4 A

  • Drain-source On Resistance-Max:

    0.15 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    44 pF

  • JESD-30 Code:

    R-PDSO-G3

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -50 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    P-CHANNEL

  • Power Dissipation-Max (Abs):

    0.5 W

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn)

  • Terminal Form:

    GULL WING

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

SI1317DL-T1-GE3 Frequently Asked Questions (FAQs)

  • The recommended PCB footprint for the SI1317DL-T1-GE3 is a standard SOT23-6 package with a 1.8mm x 1.35mm body size. A minimum pad size of 0.8mm x 0.8mm is recommended for reliable soldering.
  • To ensure proper biasing, connect the VIN pin to a stable voltage source between 2.5V and 5.5V, and the EN pin to a logic-level signal (e.g., 0V or VIN) to enable or disable the device. Additionally, decouple the VIN pin with a 1uF ceramic capacitor to minimize noise and ensure stable operation.
  • The maximum allowable power dissipation for the SI1317DL-T1-GE3 is 1.4W at an ambient temperature of 25°C. However, this value can be derated based on the operating temperature and PCB design. Consult the datasheet for thermal resistance and power dissipation calculations.
  • The SI1317DL-T1-GE3 is rated for operation up to 125°C. However, the device's performance and reliability may degrade at elevated temperatures. Consult the datasheet for temperature-related specifications and derating factors.
  • To protect the SI1317DL-T1-GE3 from ESD and overvoltage, use a TVS diode or a transient voltage suppressor on the input pins. Additionally, consider adding a series resistor and a capacitor to the input pins to filter out noise and transients.

Trust Checks

This model has been verified by system checks.
System Verified
Sponsored

SI1317DL-T1-GE3 Overview

Use the download button to access the SI1317DL-T1-GE3 schematic symbol, PCB footprint, and 3D model.
To find more CAD model downloads similar to this part, try a partial part number search, like SI131, or try a keyword search, such as Small Signal Field-Effect Transistors

Parts related to SI1317DL-T1-GE3

Showing 0 results