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SI1411DH-T1-GE3 - Vishay

Description: MOSFET P-Chnl 150-V (D-S)

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SI1411DH-T1-GE3 - Vishay PCB footprint - SOT23 (6-Pin) - SOT23 (6-Pin) - SC-70 6 LEADS
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3D Models
SI1411DH-T1-GE3 - Vishay  - 3D model - SOT23 (6-Pin) - SC-70 6 LEADS
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SI1411DH-T1-GE3 Details

  • Manufacturer Part Number:

    SI1411DH-T1-GE3

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Package Description:

    HALOGEN FREE AND ROHS COMPLIANT, SC-70, 6 PIN

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    8 Weeks

  • Manufacturer:

    Vishay Intertechnologies

  • YTEOL:

    6.5

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    150 V

  • Drain Current-Max (ID):

    0.42 A

  • Drain-source On Resistance-Max:

    2.7 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JESD-30 Code:

    R-PDSO-G6

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    6

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    P-CHANNEL

  • Power Dissipation-Max (Abs):

    1.56 W

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    MATTE TIN

  • Terminal Form:

    GULL WING

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

SI1411DH-T1-GE3 Frequently Asked Questions (FAQs)

  • A recommended PCB layout for optimal thermal performance would be to use a large copper pad under the device, connected to a solid ground plane, and to use thermal vias to dissipate heat. Additionally, keeping the PCB layer stack-up symmetrical and using a thermal relief pattern can help reduce thermal resistance.
  • To ensure the device is properly biased, follow the recommended operating conditions outlined in the datasheet. This includes setting the input voltage (VIN) within the specified range, using a suitable input capacitor, and ensuring the output voltage (VOUT) is within the recommended range. Additionally, consider using a soft-start circuit to prevent inrush currents during startup.
  • For EMI filtering and noise reduction, consider adding a pi-filter (L-C-L) or a common-mode choke at the input, and using a shielded inductor. Additionally, ensure the PCB layout is designed to minimize radiated emissions, and consider adding a snubber circuit to reduce ringing and oscillations.
  • When selecting an inductor, consider the device's recommended inductance range, DC resistance, and saturation current. Choose an inductor with a high saturation current rating to ensure it can handle the peak current. Additionally, consider the inductor's physical size, core material, and temperature rating to ensure it meets the application's requirements.
  • The device's thermal derating is specified in the datasheet. To ensure reliable operation, consider the device's junction temperature (TJ) and ambient temperature (TA) when designing the system. Derate the device's power rating according to the datasheet's thermal derating curve to prevent overheating and ensure long-term reliability.

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SI1411DH-T1-GE3 Overview

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