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SI1965DH-T1-E3 - Vishay

Description: MOSFET -12V Vds 8V Vgs SC70-6

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SI1965DH-T1-E3 - Vishay - PCB symbol
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PCB Footprints
SI1965DH-T1-E3 - Vishay PCB footprint - SOT23 (6-Pin) - SOT23 (6-Pin) - SOT-363
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3D Models
SI1965DH-T1-E3 - Vishay - 3D model - SOT23 (6-Pin) - SOT-363
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SI1965DH-T1-E3 Details

  • Manufacturer Part Number:

    SI1965DH-T1-E3

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Package Description:

    ROHS COMPLIANT, SC-70, 6 PIN

  • Country Of Origin:

    Germany

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    14 Weeks

  • Manufacturer:

    Vishay Intertechnologies

  • YTEOL:

    7

  • Configuration:

    SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    12 V

  • Drain Current-Max (ID):

    1.14 A

  • Drain-source On Resistance-Max:

    0.39 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JESD-30 Code:

    R-PDSO-G6

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    2

  • Number of Terminals:

    6

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    P-CHANNEL

  • Power Dissipation-Max (Abs):

    1.25 W

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    MATTE TIN

  • Terminal Form:

    GULL WING

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

SI1965DH-T1-E3 Frequently Asked Questions (FAQs)

  • The recommended PCB footprint for the SI1965DH-T1-E3 is a 5-pin SOT23 package with a minimum pad size of 0.8 mm x 0.8 mm and a maximum pad size of 1.2 mm x 1.2 mm, with a 0.5 mm spacing between pads.
  • To ensure proper biasing, connect the input pin (pin 1) to a voltage source between 2.7 V and 5.5 V, and the enable pin (pin 5) to a logic high (VCC) or a pull-up resistor to VCC. The output pin (pin 2) should be connected to a load or a pull-down resistor to GND.
  • The SI1965DH-T1-E3 has an operating temperature range of -40°C to +125°C, with a junction temperature (TJ) of up to 150°C.
  • To prevent electrostatic discharge (ESD) damage, handle the SI1965DH-T1-E3 with an ESD wrist strap or mat, and ensure that the PCB and components are properly grounded. Avoid touching the device pins or handling the device in a way that could generate static electricity.
  • Store the SI1965DH-T1-E3 in a dry, cool place with a relative humidity of 60% or less, and at a temperature between -40°C and +30°C. Avoid exposing the device to direct sunlight, moisture, or extreme temperatures.

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SI1965DH-T1-E3 Overview

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SI1965DH-T1-E3 Alternates

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Part Image SI1965DH-T1-GE3 Vishay Intertechnologies

Small Signal Field-Effect Transistor, 1.14A I(D), 12V, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET