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SI1972DH-T1-E3 - Vishay

Description: SI1972DH-T1-E3, Dual N-channel MOSFET Transistor 1.3 A 30 V, 6-Pin SC-70, SOT-363

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PCB Footprints
SI1972DH-T1-E3 - Vishay PCB footprint - SOT23 (6-Pin) - SOT23 (6-Pin) - SOT-363
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3D Models
SI1972DH-T1-E3 - Vishay  - 3D model - SOT23 (6-Pin) - SOT-363
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SI1972DH-T1-E3 Details

  • Manufacturer Part Number:

    SI1972DH-T1-E3

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Package Description:

    SC-70, 6 PIN

  • ECCN Code:

    EAR99

  • Manufacturer:

    Vishay Intertechnologies

  • YTEOL:

    0

  • Configuration:

    SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    30 V

  • Drain Current-Max (ID):

    1.3 A

  • Drain-source On Resistance-Max:

    0.225 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JESD-30 Code:

    R-PDSO-G6

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    2

  • Number of Terminals:

    6

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    1.25 W

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    MATTE TIN

  • Terminal Form:

    GULL WING

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

SI1972DH-T1-E3 Frequently Asked Questions (FAQs)

  • The recommended PCB footprint for the SI1972DH-T1-E3 is a 5-pin SOT23 package with a minimum pad size of 0.8 mm x 0.8 mm and a maximum pad size of 1.2 mm x 1.2 mm, with a 0.5 mm spacing between pads.
  • To ensure reliability in high-temperature applications, it's essential to follow proper derating guidelines, use a suitable thermal interface material, and ensure good thermal conduction between the device and the PCB. Additionally, consider using a thermally enhanced package or a heat sink if necessary.
  • The maximum allowed voltage on the enable pin (EN) of the SI1972DH-T1-E3 is 6 V, which is the maximum rating for the logic input voltage. Exceeding this voltage may cause damage to the device.
  • Yes, the SI1972DH-T1-E3 can be used in switching regulator applications, but it's essential to ensure that the device is properly bypassed and that the switching frequency is within the recommended range (typically up to 1 MHz). Additionally, consider the device's power dissipation and thermal management.
  • To calculate the power dissipation of the SI1972DH-T1-E3, you need to consider the device's voltage drop, current rating, and package thermal resistance. Use the following formula: Pd = (Vin - Vout) x Iout x RθJA, where Pd is the power dissipation, Vin is the input voltage, Vout is the output voltage, Iout is the output current, and RθJA is the package thermal resistance.

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SI1972DH-T1-E3 Overview

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