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SI2301BDS-T1-BE3 - Vishay

Description: MOSFET P-CHANNEL 2.5V (G-S)

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SI2301BDS-T1-BE3 - Vishay PCB footprint - SOT23 (3-Pin) - SOT23 (3-Pin) - sot-23-ren5
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SI2301BDS-T1-BE3 - Vishay  - 3D model - SOT23 (3-Pin) - sot-23-ren5
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SI2301BDS-T1-BE3 Details

  • Manufacturer Part Number:

    SI2301BDS-T1-BE3

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Package Description:

    TO-236, SOT-23, 3 PIN

  • ECCN Code:

    EAR99

  • Manufacturer:

    Vishay Intertechnologies

  • YTEOL:

    0

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    20 V

  • Drain Current-Max (ID):

    2.2 A

  • Drain-source On Resistance-Max:

    0.1 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    65 pF

  • JEDEC-95 Code:

    TO-236AB

  • JESD-30 Code:

    R-PDSO-G3

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    P-CHANNEL

  • Surface Mount:

    YES

  • Terminal Finish:

    TIN

  • Terminal Form:

    GULL WING

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Element Material:

    SILICON

SI2301BDS-T1-BE3 Frequently Asked Questions (FAQs)

  • A good PCB layout for the SI2301BDS-T1-BE3 should include a solid ground plane, wide traces for power and ground, and a thermal relief pattern under the device to facilitate heat dissipation. A minimum of 2 oz copper thickness is recommended.
  • To ensure reliable operation in high-temperature environments, ensure proper heat sinking, use a thermally conductive interface material, and follow the recommended PCB layout guidelines. Additionally, consider derating the device's power handling capabilities according to the temperature derating curve provided in the datasheet.
  • The SI2301BDS-T1-BE3 is a sensitive semiconductor device and requires proper ESD protection during handling and assembly. Use an ESD wrist strap, mat, or workstation, and follow standard ESD handling precautions to prevent damage.
  • Yes, the SI2301BDS-T1-BE3 is suitable for high-frequency switching applications. However, ensure that the device is properly bypassed with capacitors and that the PCB layout is optimized for high-frequency operation. Additionally, consider the device's switching characteristics and ensure that it meets the requirements of your specific application.
  • The recommended soldering conditions for the SI2301BDS-T1-BE3 are a peak temperature of 260°C for 10 seconds, with a soldering iron temperature of 350°C. For rework, use a low-temperature soldering iron and a solder wick or vacuum desoldering tool to minimize thermal stress on the device.

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SI2301BDS-T1-BE3 Overview

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Part Image SI2301BDS-T1-GE3 Vishay Intertechnologies

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For a full list of alternate parts for SI2301BDS-T1-BE3, check out Findchips.com