Part Image

SI2302CDS-T1-E3 - Vishay

Description: VISHAY - SI2302CDS-T1-E3 - MOSFET Transistor, N Channel, 2.6 A, 20 V, 0.045 ohm, 4.5 V, 400 mV

Download SI2302CDS-T1-E3 Model
Schematic
symbols
Schematic symbol is unavailable for download
PCB
footprints
PCB footprint is unavailable for download
3D
models
3D model is unavailable for download
PCB Footprints
SI2302CDS-T1-E3 - Vishay PCB footprint - SOT23 (3-Pin) - SOT23 (3-Pin) - SOT-23 (TO-236)
click to zoom
3D Models
SI2302CDS-T1-E3 - Vishay  - 3D model - SOT23 (3-Pin) - SOT-23 (TO-236)
click to zoom

SI2302CDS-T1-E3 Details

  • Manufacturer Part Number:

    SI2302CDS-T1-E3

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Not Recommended

  • Package Description:

    ROHS COMPLIANT, TO-236, 3 PIN

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    15 Weeks

  • Manufacturer:

    Vishay Intertechnologies

  • YTEOL:

    3

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    20 V

  • Drain Current-Max (ID):

    2.6 A

  • Drain-source On Resistance-Max:

    0.057 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-236AB

  • JESD-30 Code:

    R-PDSO-G3

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    0.86 W

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    MATTE TIN

  • Terminal Form:

    GULL WING

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

SI2302CDS-T1-E3 Frequently Asked Questions (FAQs)

  • The recommended PCB footprint for the SI2302CDS-T1-E3 is a 6-pin SOT23 package with a 1.5mm x 2.5mm body size. A minimum pad size of 0.5mm x 0.5mm is recommended for reliable soldering.
  • To ensure proper biasing, connect the input pin (VIN) to a stable voltage source between 2.5V and 5.5V. The output pin (VOUT) should be decoupled with a 1uF ceramic capacitor to ground. Additionally, ensure the input and output pins are not overloaded, and the device is operated within the recommended temperature range.
  • The maximum allowed power dissipation for the SI2302CDS-T1-E3 is 1.4W. Ensure the device is operated within this limit to prevent overheating and ensure reliable operation.
  • The SI2302CDS-T1-E3 is rated for operation up to 125°C. However, it's essential to consider the device's power dissipation and thermal resistance when operating in high-temperature environments. Ensure the device is properly heat-sinked and operated within the recommended temperature range to prevent overheating.
  • To troubleshoot issues with the SI2302CDS-T1-E3, start by verifying the input voltage and output voltage levels. Check for proper decoupling, and ensure the device is operated within the recommended temperature range. If issues persist, consult the datasheet and application notes or contact Vishay Intertechnologies' technical support for further assistance.

Trust Checks

This model has been provided by community users.
Community Provided
This model has been verified by system checks.
System Verified
This model has been reviewed by community users.
Community Approved
Sponsored

SI2302CDS-T1-E3 Overview

Use the download button to access the SI2302CDS-T1-E3 schematic symbol, PCB footprint, and 3D model.
To find more CAD model downloads similar to this part, try a partial part number search, like SI230, or try a keyword search, such as Small Signal Field-Effect Transistors

Parts related to SI2302CDS-T1-E3

Showing 0 results

SI2302CDS-T1-E3 Alternates

Showing results

Image Part Number Model
Part Image SI2302CDS-T1-GE3 Vishay Intertechnologies

Small Signal Field-Effect Transistor, 2.6A I(D), 20V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB

Part Image SI2302CDS-T1-E3 Vishay Siliconix

Small Signal Field-Effect Transistor, 2.6A I(D), 20V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB

Part Image SI2302CDS-T1-GE3 Vishay Siliconix

Small Signal Field-Effect Transistor, 2.6A I(D), 20V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB