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SI2302CDS-T1-GE3 - Vishay

Description: SI2302CDS-T1-GE3, N-channel MOSFET Transistor 2.6 A 20 V, 3-Pin SOT-23

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Symbol
SI2302CDS-T1-GE3 - Vishay - PCB symbol
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PCB Footprints
SI2302CDS-T1-GE3 - Vishay PCB footprint - SOT23 (3-Pin) - SOT23 (3-Pin) - -SOT-23
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3D Models
SI2302CDS-T1-GE3 - Vishay - 3D model - SOT23 (3-Pin) - -SOT-23
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SI2302CDS-T1-GE3 Details

  • Manufacturer Part Number:

    SI2302CDS-T1-GE3

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Not Recommended

  • Package Description:

    HALOGEN FREE AND ROHS COMPLIANT, TO-236, 3 PIN

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    15 Weeks

  • Manufacturer:

    Vishay Intertechnologies

  • YTEOL:

    3

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    20 V

  • Drain Current-Max (ID):

    2.6 A

  • Drain-source On Resistance-Max:

    0.057 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-236AB

  • JESD-30 Code:

    R-PDSO-G3

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    0.86 W

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn)

  • Terminal Form:

    GULL WING

  • Terminal Position:

    DUAL

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

SI2302CDS-T1-GE3 Frequently Asked Questions (FAQs)

  • The recommended PCB footprint for the SI2302CDS-T1-GE3 is a standard SOT23-6 package with a 1.8mm x 1.35mm body size. A minimum pad size of 0.8mm x 0.8mm is recommended for reliable soldering.
  • To ensure proper biasing, connect the VCC pin to a stable 2.5V to 5.5V power supply, and the GND pin to a solid ground plane. The EN pin should be tied to VCC or a digital signal for enable/disable functionality.
  • The maximum allowable power dissipation for the SI2302CDS-T1-GE3 is 1.4W at an ambient temperature of 25°C. Ensure proper thermal design and heat sinking to prevent overheating.
  • The SI2302CDS-T1-GE3 is rated for operation from -40°C to 125°C. However, the device's performance and reliability may degrade at extreme temperatures. Consult the datasheet for specific temperature-related specifications.
  • Handle the SI2302CDS-T1-GE3 with ESD-protective equipment and follow proper ESD-handling procedures. The device has an internal ESD protection diode, but external protection measures are still recommended.

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SI2302CDS-T1-GE3 Overview

Use the download button to access the SI2302CDS-T1-GE3 schematic symbol, PCB footprint, and 3D model.
To find more CAD model downloads similar to this part, try a partial part number search, like SI230, or try a keyword search, such as Small Signal Field-Effect Transistors

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