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SI2302DDS-T1-GE3 - Vishay

Description: SI2302DDS-T1-GE3 N-Channel MOSFET, 2.6 A, 20 V, 3-Pin SOT-363 Vishay

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SI2302DDS-T1-GE3 - Vishay PCB footprint - SOT23 (3-Pin) - SOT23 (3-Pin) - SI2302DDS-T1-GE3-1
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3D Models
SI2302DDS-T1-GE3 - Vishay  - 3D model - SOT23 (3-Pin) - SI2302DDS-T1-GE3-1
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SI2302DDS-T1-GE3 Details

  • Manufacturer Part Number:

    SI2302DDS-T1-GE3

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Not Recommended

  • Package Description:

    TO-236, 3 PIN

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    15 Weeks

  • Manufacturer:

    Vishay Intertechnologies

  • YTEOL:

    3

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    20 V

  • Drain Current-Max (ID):

    2.6 A

  • Drain-source On Resistance-Max:

    0.057 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-236AB

  • JESD-30 Code:

    R-PDSO-G3

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    0.86 W

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn)

  • Terminal Form:

    GULL WING

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

SI2302DDS-T1-GE3 Frequently Asked Questions (FAQs)

  • A good PCB layout for the SI2302DDS-T1-GE3 should include a solid ground plane, wide power traces, and thermal vias to dissipate heat efficiently. A minimum of 2oz copper thickness is recommended.
  • To ensure reliable operation in high-temperature environments, ensure proper heat sinking, use a thermally conductive interface material, and follow the recommended derating guidelines for the device.
  • The SI2302DDS-T1-GE3 has built-in ESD protection, but handling precautions are still necessary. Use an ESD wrist strap, work on an ESD mat, and handle the device by the body or leads to prevent damage.
  • The SI2302DDS-T1-GE3 is a commercial-grade device, but Vishay Intertechnologies offers high-reliability versions of similar devices. Contact Vishay for more information on their high-reliability product offerings.
  • Follow the recommended soldering profile: peak temperature 260°C, time above 217°C 60s max. For rework, use a low-temperature soldering iron and avoid applying excessive heat or force to the device.

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SI2302DDS-T1-GE3 Overview

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