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SI2302DS-T1 - Vishay

Description: ER - Transistor, MOSFET, N Ch

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PCB Footprints
SI2302DS-T1 - Vishay PCB footprint - SOT23 (3-Pin) - SOT23 (3-Pin) - SOT-23 (TO-236)
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3D Models
SI2302DS-T1 - Vishay  - 3D model - SOT23 (3-Pin) - SOT-23 (TO-236)
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SI2302DS-T1 Details

  • Manufacturer Part Number:

    SI2302DS-T1

  • Part Life Cycle Code:

    Obsolete

  • Package Description:

    TO-236, 3 PIN

  • ECCN Code:

    EAR99

  • Manufacturer:

    Vishay Intertechnologies

  • YTEOL:

    0

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    20 V

  • Drain Current-Max (ID):

    2.8 A

  • Drain-source On Resistance-Max:

    0.085 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-236

  • JESD-30 Code:

    R-PDSO-G3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Polarity/Channel Type:

    N-CHANNEL

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Form:

    GULL WING

  • Terminal Position:

    DUAL

  • Transistor Element Material:

    SILICON

SI2302DS-T1 Frequently Asked Questions (FAQs)

  • A good PCB layout for the SI2302DS-T1 should include a thermal pad connected to a large copper area on the PCB to dissipate heat efficiently. A minimum of 2 oz copper thickness is recommended, and the thermal pad should be connected to a solid ground plane to reduce thermal resistance.
  • To ensure proper biasing, the SI2302DS-T1 requires a stable voltage supply with minimal noise and ripple. A decoupling capacitor (e.g., 100 nF) should be placed close to the device, and the input voltage should be filtered using a ferrite bead or a pi-filter to reduce high-frequency noise.
  • The maximum allowed power dissipation for the SI2302DS-T1 is 1.4 W at a junction temperature of 150°C. However, it's recommended to derate the power dissipation to ensure a safe operating temperature and to prevent thermal runaway.
  • To protect the SI2302DS-T1 from ESD, handle the device by the body or use an anti-static wrist strap. Ensure the PCB is designed with ESD protection in mind, including the use of ESD diodes or resistors, and follow proper handling and storage procedures.
  • Store the SI2302DS-T1 in a dry, cool place, away from direct sunlight and moisture. Handle the device by the body or use an anti-static wrist strap to prevent ESD damage. Avoid bending or flexing the leads, and use a vacuum pick-up tool or tweezers to handle the device.

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SI2302DS-T1 Overview

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SI2302DS-T1 Alternates

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Image Part Number Model
Part Image SI2302DS,215 NXP Semiconductors

Small Signal Field-Effect Transistor, 2.5A I(D), 20V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB

Part Image SI2302DST/R NXP Semiconductors

Small Signal Field-Effect Transistor, 2.5A I(D), 20V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB

Part Image SI2302DS-T1 Vishay Siliconix

Power Field-Effect Transistor, 2.8A I(D), 20V, 0.085ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236

Part Image SI2302DS Nexperia

Small Signal Field-Effect Transistor, 2.5A I(D), 20V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB

Part Image SI2302DS,215 Nexperia

Small Signal Field-Effect Transistor, 2.5A I(D), 20V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB

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