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SI2303BDS-T1-E3 - Vishay

Description: SI2303BDS-T1-E3, P-channel MOSFET Transistor 1.3 A 30 V, 3-Pin SOT-23, TO-236

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Symbol
SI2303BDS-T1-E3 - Vishay - PCB symbol
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PCB Footprints
SI2303BDS-T1-E3 - Vishay PCB footprint - SOT23 (3-Pin) - SOT23 (3-Pin) - SOT-23 (TO-236)
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3D Models
SI2303BDS-T1-E3 - Vishay - 3D model - SOT23 (3-Pin) - SOT-23 (TO-236)
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SI2303BDS-T1-E3 Details

  • Manufacturer Part Number:

    SI2303BDS-T1-E3

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Package Description:

    ROHS COMPLIANT PACKAGE-3

  • ECCN Code:

    EAR99

  • Manufacturer:

    Vishay Intertechnologies

  • YTEOL:

    0

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    30 V

  • Drain Current-Max (ID):

    1.49 A

  • Drain-source On Resistance-Max:

    0.2 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-236

  • JESD-30 Code:

    R-PDSO-G3

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    P-CHANNEL

  • Power Dissipation-Max (Abs):

    0.9 W

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn)

  • Terminal Form:

    GULL WING

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Element Material:

    SILICON

SI2303BDS-T1-E3 Frequently Asked Questions (FAQs)

  • The recommended PCB footprint for the SI2303BDS-T1-E3 is a 2x2mm QFN package with a 0.5mm pitch. A minimum of 4 thermal vias under the exposed pad is recommended for optimal thermal performance.
  • To ensure proper biasing, connect VCC to a stable 3.3V or 5V power supply, and GND to a solid ground plane. Ensure that the input voltage (VIN) is within the recommended range of 2.5V to 5.5V.
  • The maximum operating frequency for the SI2303BDS-T1-E3 is 100 MHz. However, the actual operating frequency may vary depending on the specific application and PCB layout.
  • The SI2303BDS-T1-E3 has built-in ESD protection, but it's still recommended to follow proper ESD handling procedures during assembly and testing. Use an ESD wrist strap or mat, and ensure that the device is stored in an ESD-safe environment.
  • The thermal resistance (RθJA) of the SI2303BDS-T1-E3 is 45°C/W. This value is based on a 4-layer PCB with a solid ground plane and thermal vias under the exposed pad.

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SI2303BDS-T1-E3 Overview

Use the download button to access the SI2303BDS-T1-E3 schematic symbol, PCB footprint, and 3D model.
To find more CAD model downloads similar to this part, try a partial part number search, like SI230, or try a keyword search, such as Small Signal Field-Effect Transistors

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