Part Image

SI2303CDS-T1-GE3 - Vishay

Description: SI2303CDS-T1-GE3, P-channel MOSFET Transistor 1.9 A 30 V, 3-Pin SOT-23

Download SI2303CDS-T1-GE3 Model
Schematic
symbols
Schematic symbol is unavailable for download
PCB
footprints
PCB footprint is unavailable for download
3D
models
3D model is unavailable for download
PCB Footprints
SI2303CDS-T1-GE3 - Vishay PCB footprint - SOT23 (3-Pin) - SOT23 (3-Pin) - SOT-23 (TO-236)
click to zoom
3D Models
SI2303CDS-T1-GE3 - Vishay  - 3D model - SOT23 (3-Pin) - SOT-23 (TO-236)
click to zoom

SI2303CDS-T1-GE3 Details

  • Manufacturer Part Number:

    SI2303CDS-T1-GE3

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Package Description:

    TO-236, SOT-23, 3 PIN

  • Country Of Origin:

    USA

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    15 Weeks

  • Manufacturer:

    Vishay Intertechnologies

  • YTEOL:

    7

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    30 V

  • Drain Current-Max (ID):

    2.7 A

  • Drain-source On Resistance-Max:

    0.19 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    25 pF

  • JEDEC-95 Code:

    TO-236AB

  • JESD-30 Code:

    R-PDSO-G3

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    P-CHANNEL

  • Power Dissipation-Max (Abs):

    2.3 W

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn)

  • Terminal Form:

    GULL WING

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

SI2303CDS-T1-GE3 Frequently Asked Questions (FAQs)

  • The recommended PCB footprint for the SI2303CDS-T1-GE3 is a 6-pin SOT23 package with a minimum pad size of 0.8 mm x 0.8 mm and a thermal pad size of 2.5 mm x 2.5 mm.
  • To ensure proper biasing, connect the input pin (VIN) to a stable voltage source, and the enable pin (EN) to a logic-level signal. The output pin (VOUT) should be decoupled with a 10 μF ceramic capacitor.
  • The SI2303CDS-T1-GE3 is rated for operation in an ambient temperature range of -40°C to +125°C.
  • Yes, the SI2303CDS-T1-GE3 is qualified to AEC-Q100, making it suitable for high-reliability applications such as automotive and industrial systems.
  • To calculate power dissipation, use the formula: Pd = (VIN - VOUT) x IOUT. Ensure the calculated power dissipation does not exceed the maximum rating of 1.5 W.

Trust Checks

This model has been provided by community users.
Community Provided
This model has been verified by system checks.
System Verified
This model has been reviewed by community users.
Community Approved
Sponsored

SI2303CDS-T1-GE3 Overview

Use the download button to access the SI2303CDS-T1-GE3 schematic symbol, PCB footprint, and 3D model.
To find more CAD model downloads similar to this part, try a partial part number search, like SI230, or try a keyword search, such as Small Signal Field-Effect Transistors

Parts related to SI2303CDS-T1-GE3

Showing 0 results

SI2303CDS-T1-GE3 Alternates

Showing results

Image Part Number Model
Part Image SI2303CDS-T1-E3 Vishay Siliconix

Small Signal Field-Effect Transistor, 2.7A I(D), 30V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB

Part Image SI2303CDS-T1-GE3 Vishay Siliconix

Small Signal Field-Effect Transistor, 2.7A I(D), 30V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB