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SI2306BDS-T1-GE3 - Vishay

Description: MOSFET 30V 4.0A 1.25W 47mohm @ 4.5V

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PCB Footprints
SI2306BDS-T1-GE3 - Vishay PCB footprint - SOT23 (3-Pin) - SOT23 (3-Pin) - SOT-23 (TO-236)
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3D Models
SI2306BDS-T1-GE3 - Vishay  - 3D model - SOT23 (3-Pin) - SOT-23 (TO-236)
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SI2306BDS-T1-GE3 Details

  • Manufacturer Part Number:

    SI2306BDS-T1-GE3

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Not Recommended

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    19 Weeks

  • Manufacturer:

    Vishay Intertechnologies

  • YTEOL:

    3

  • Qualification Status:

    Not Qualified

SI2306BDS-T1-GE3 Frequently Asked Questions (FAQs)

  • The recommended PCB footprint for the SI2306BDS-T1-GE3 is a 6-pin SOT-23 package with a 1.5mm x 1.5mm body size. The recommended land pattern is available in the Vishay Intertechnologies' application note or can be obtained from the manufacturer's website.
  • To ensure reliability in high-temperature applications, it is recommended to follow the derating guidelines provided in the datasheet. Additionally, consider using a thermal pad or heat sink to dissipate heat, and ensure proper PCB design and layout to minimize thermal resistance.
  • The maximum allowed voltage on the gate of the SI2306BDS-T1-GE3 is ±20V. Exceeding this voltage may damage the device. It is recommended to use a gate resistor and a voltage limiter to prevent overvoltage conditions.
  • To protect the SI2306BDS-T1-GE3 from ESD, handle the device with an anti-static wrist strap or mat, and ensure that the PCB design includes ESD protection components such as TVS diodes or ESD protection arrays.
  • The recommended storage condition for the SI2306BDS-T1-GE3 is in a dry, cool place with a temperature range of -40°C to 125°C and humidity below 60%. Avoid exposing the device to direct sunlight, moisture, or extreme temperatures.

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SI2306BDS-T1-GE3 Overview

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Part Image SI2306BDS-T1-E3 Vishay Intertechnologies

Power Field-Effect Transistor

Part Image SI2306BDS-T1-E3 Vishay Siliconix

Power Field-Effect Transistor, 3.16A I(D), 30V, 0.047ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AA

Part Image SI2306BDS-T1-GE3 Vishay Siliconix

Power Field-Effect Transistor, 3.16A I(D), 30V, 0.047ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AA