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SI2307CDS-T1-E3 - Vishay

Description: MOSFETs -30V Vds 20V Vgs SOT-23

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PCB Footprints
SI2307CDS-T1-E3 - Vishay PCB footprint - SOT23 (3-Pin) - SOT23 (3-Pin) - SOT-23 (TO-236): 3-LEAD
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3D Models
SI2307CDS-T1-E3 - Vishay  - 3D model - SOT23 (3-Pin) - SOT-23 (TO-236): 3-LEAD
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SI2307CDS-T1-E3 Details

  • Manufacturer Part Number:

    SI2307CDS-T1-E3

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Package Description:

    P-Channel 30 V (D-S) MOSFET

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    15 Weeks

  • Manufacturer:

    Vishay Intertechnologies

  • YTEOL:

    5

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    30 V

  • Drain Current-Max (ID):

    2.7 A

  • Drain-source On Resistance-Max:

    0.088 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    51 pF

  • JEDEC-95 Code:

    TO-236AB

  • JESD-30 Code:

    R-PDSO-G3

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    P-CHANNEL

  • Pulsed Drain Current-Max (IDM):

    12 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn)

  • Terminal Form:

    GULL WING

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

  • Turn-off Time-Max (toff):

    70 ns

  • Turn-on Time-Max (ton):

    120 ns

SI2307CDS-T1-E3 Frequently Asked Questions (FAQs)

  • The recommended PCB footprint for the SI2307CDS-T1-E3 is a 5-pin SOT23 package with a minimum pad size of 0.8mm x 0.8mm and a thermal pad size of 2.5mm x 2.5mm.
  • To ensure reliability in high-temperature applications, ensure that the device is operated within the recommended junction temperature range of -40°C to 150°C, and follow proper thermal management practices such as using a heat sink or thermal interface material.
  • The maximum allowed voltage on the input pins of the SI2307CDS-T1-E3 is 5.5V, exceeding which may cause damage to the device.
  • To handle ESD protection for the SI2307CDS-T1-E3, follow proper ESD handling procedures during assembly and storage, and consider adding external ESD protection devices such as TVS diodes or ESD arrays.
  • The recommended storage condition for the SI2307CDS-T1-E3 is in a dry, cool place with a temperature range of 5°C to 30°C and humidity below 60%.

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SI2307CDS-T1-E3 Overview

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Image Part Number Model
Part Image SI2307BDS-T1-E3 Vishay Intertechnologies

Power Field-Effect Transistor, 2.5A I(D), 30V, 0.078ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB

Part Image SI2307CDS-T1-E3 Vishay Siliconix

Power Field-Effect Transistor, 2.7A I(D), 30V, 0.088ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB

Part Image SI2307BDS-T1-E3 Vishay Siliconix

Power Field-Effect Transistor, 2.5A I(D), 30V, 0.078ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB

Part Image SI2307BDS-T1-GE3 Vishay Siliconix

Power Field-Effect Transistor, 2.5A I(D), 30V, 0.078ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB

Part Image SI2307BDS-T1-GE3 Vishay Intertechnologies

Power Field-Effect Transistor, 2.5A I(D), 30V, 0.078ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB

For a full list of alternate parts for SI2307CDS-T1-E3, check out Findchips.com