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Image Part Number D.S Description Package Category Prices / Stock Model Action
Image Part Number D.S Description Package Category Prices / Stock Model Action
Part Image Part Image 1 100% avalanche tested; Low gate charge ( Typ. 13nC); -9.4A, -60V, RDS(on) = 185mΩ(Max.) @VGS = -10 V, ID = -4.7A; Low Crss ( Typ. 45pF) Other FQD11P06TM 1 Download Model
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FQD11P06TM Rochester Electronics LLC
1 9.4A, 60V, 0.185ohm, P-CHANNEL, Si, POWER, MOSFET, TO-252, LEAD FREE, DPAK-3 FQD11P06TM 0 Build or Request
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FQD11P06TM Fairchild Semiconductor Corporation
1 Power Field-Effect Transistor, 9.4A I(D), 60V, 0.185ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 FQD11P06TM 0 Build or Request
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FQD11P06TM_SB82077 Fairchild Semiconductor Corporation
1 Power Field-Effect Transistor, 9.4A I(D), 60V, 0.185ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 FQD11P06TM_SB82077 0 Build or Request
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