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SI2308DS-T1-E3 - Vishay

Description: SI2308DS-T1-E3 N-Channel MOSFET Transistor, 2 A, 60 V, 3-Pin SOT-23 Vishay

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SI2308DS-T1-E3 - Vishay PCB footprint - SOT23 (3-Pin) - SOT23 (3-Pin) - SOT-23 (Height 1.15mm)
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SI2308DS-T1-E3 - Vishay  - 3D model - SOT23 (3-Pin) - SOT-23 (Height 1.15mm)
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SI2308DS-T1-E3 Details

  • Manufacturer Part Number:

    SI2308DS-T1-E3

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Package Description:

    SOT-23, 3 PIN

  • ECCN Code:

    EAR99

  • Manufacturer:

    Vishay Intertechnologies

  • YTEOL:

    0

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    60 V

  • Drain Current-Max (ID):

    2 A

  • Drain-source On Resistance-Max:

    0.16 Ω

  • FET Technology:

    TRENCH MOSFET

  • Feedback Cap-Max (Crss):

    15 pF

  • JEDEC-95 Code:

    TO-236

  • JESD-30 Code:

    R-PDSO-G3

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Pulsed Drain Current-Max (IDM):

    10 A

  • Reference Standard:

    IEC-61249-2-21

  • Surface Mount:

    YES

  • Terminal Finish:

    MATTE TIN

  • Terminal Form:

    GULL WING

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Element Material:

    SILICON

  • Turn-off Time-Max (toff):

    50 ns

  • Turn-on Time-Max (ton):

    35 ns

SI2308DS-T1-E3 Frequently Asked Questions (FAQs)

  • The recommended PCB footprint for the SI2308DS-T1-E3 is a standard SOT23-6 package with a 1.8mm x 1.35mm body size. A minimum pad size of 0.5mm x 0.5mm is recommended for reliable soldering.
  • To ensure proper biasing, connect the VIN pin to a stable voltage source between 2.5V to 5.5V, and the EN pin to a logic-level signal (e.g., 0V or VIN) to enable or disable the device. Additionally, decouple the VIN pin with a 1uF capacitor to minimize noise and ensure stable operation.
  • The maximum current rating for the SI2308DS-T1-E3 is 1.5A per channel, with a total current limit of 3A for both channels combined. Ensure that the device is properly heat-sinked and operated within the recommended temperature range to prevent overheating.
  • To protect the SI2308DS-T1-E3 from overvoltage and ESD, use a TVS diode or a zener diode on the VIN pin to clamp voltage transients. Additionally, ensure that the PCB design includes adequate ESD protection measures, such as ESD diodes or resistors, to prevent damage from electrostatic discharge.
  • The thermal resistance of the SI2308DS-T1-E3 package is typically around 150°C/W (junction-to-ambient) and 30°C/W (junction-to-case). Ensure that the device is properly heat-sinked and operated within the recommended temperature range to prevent overheating.

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SI2308DS-T1-E3 Overview

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