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SI2312BDS-T1-GE3 - Vishay

Description: SI2312BDS-T1-GE3, N-channel MOSFET Transistor 3.9 A 20 V, 3-Pin TO-236

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Symbol
SI2312BDS-T1-GE3 - Vishay - PCB symbol
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PCB Footprints
SI2312BDS-T1-GE3 - Vishay PCB footprint - SOT23 (3-Pin) - SOT23 (3-Pin) - SOT-23 (TO-236)
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3D Models
SI2312BDS-T1-GE3 - Vishay - 3D model - SOT23 (3-Pin) - SOT-23 (TO-236)
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SI2312BDS-T1-GE3 Details

  • Manufacturer Part Number:

    SI2312BDS-T1-GE3

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Package Description:

    SOT-23, 3 PIN

  • ECCN Code:

    EAR99

  • Manufacturer:

    Vishay Intertechnologies

  • YTEOL:

    0

  • Avalanche Energy Rating (Eas):

    8.45 mJ

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    20 V

  • Drain Current-Max (ID):

    3.9 A

  • Drain-source On Resistance-Max:

    0.031 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-236

  • JESD-30 Code:

    R-PDSO-G3

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    0.75 W

  • Pulsed Drain Current-Max (IDM):

    15 A

  • Qualification Status:

    Not Qualified

  • Reference Standard:

    IEC-61249-2-21

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn)

  • Terminal Form:

    GULL WING

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Element Material:

    SILICON

  • Turn-off Time-Max (toff):

    70 ns

  • Turn-on Time-Max (ton):

    60 ns

SI2312BDS-T1-GE3 Frequently Asked Questions (FAQs)

  • The recommended PCB footprint for the SI2312BDS-T1-GE3 is a 6-pin SOT23 package with a 1.6mm x 1.6mm body size. A minimum pad size of 0.5mm x 0.5mm is recommended for reliable soldering.
  • To ensure proper biasing, connect the input pin (pin 1) to a voltage source (VCC) through a 1kΩ to 10kΩ resistor. The output pin (pin 6) should be connected to a load resistor (RL) in the range of 1kΩ to 10kΩ. A bypass capacitor (CB) of 10nF to 100nF should be connected between the input pin and ground.
  • The SI2312BDS-T1-GE3 has an operating temperature range of -40°C to +125°C. However, it's recommended to operate the device within a temperature range of -20°C to +85°C for optimal performance and reliability.
  • Yes, the SI2312BDS-T1-GE3 is suitable for high-frequency applications up to 1 GHz. However, it's essential to follow proper PCB layout and design guidelines to minimize parasitic inductance and capacitance, ensuring optimal performance at high frequencies.
  • To prevent electrostatic discharge (ESD) damage, handle the SI2312BDS-T1-GE3 with an ESD wrist strap or mat, and ensure the workspace is ESD-protected. Avoid touching the device's pins or leads, and use ESD-safe packaging and storage materials.

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SI2312BDS-T1-GE3 Overview

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SI2312BDS-T1-GE3 Alternates

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Image Part Number Model
Part Image SI2312BDS-T1-E3 Vishay Intertechnologies

Power Field-Effect Transistor, 3.9A I(D), 20V, 0.031ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236
Part Image SI2312DS Vishay Siliconix

Power Field-Effect Transistor, 3.77A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET
Part Image SI2312BDS-T1-E3 Vishay Siliconix

Power Field-Effect Transistor, 3.9A I(D), 20V, 0.031ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236
Part Image SI2312DS-T1 Vishay Siliconix

Small Signal Field-Effect Transistor, 3.77A I(D), 20V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB
Part Image SI2312DS-T1-E3 Vishay Siliconix

Small Signal Field-Effect Transistor, 3.77A I(D), 20V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB
For a full list of alternate parts for SI2312BDS-T1-GE3, check out Findchips.com