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SI2312CDS-T1-BE3 - Vishay

Description: MOSFET N-CHANNEL 20-V (D-S)

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PCB Footprints
SI2312CDS-T1-BE3 - Vishay PCB footprint - SOT23 (3-Pin) - SOT23 (3-Pin) - SOT-23 (TO-236)
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3D Models
SI2312CDS-T1-BE3 - Vishay  - 3D model - SOT23 (3-Pin) - SOT-23 (TO-236)
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SI2312CDS-T1-BE3 Details

  • Manufacturer Part Number:

    SI2312CDS-T1-BE3

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Package Description:

    SOT-23, 3 PIN

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    15 Weeks

  • Manufacturer:

    Vishay Intertechnologies

  • YTEOL:

    5

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    20 V

  • Drain Current-Max (ID):

    6 A

  • Drain-source On Resistance-Max:

    0.0318 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    55 pF

  • JEDEC-95 Code:

    TO-236

  • JESD-30 Code:

    R-PDSO-G3

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    2.1 W

  • Pulsed Drain Current-Max (IDM):

    20 A

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn)

  • Terminal Form:

    GULL WING

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

  • Turn-off Time-Max (toff):

    63 ns

  • Turn-on Time-Max (ton):

    42 ns

SI2312CDS-T1-BE3 Frequently Asked Questions (FAQs)

  • The recommended land pattern for the SI2312CDS-T1-BE3 can be found in the Vishay Intertechnologies' application note 'Land Pattern Recommendations for Vishay's D2PAK and TO-252 Packages' (document number 81011).
  • To ensure reliability in high-temperature applications, follow the recommended derating guidelines for the SI2312CDS-T1-BE3, and consider using a heat sink or thermal interface material to reduce the junction temperature. Additionally, ensure proper PCB design and layout to minimize thermal resistance.
  • The maximum allowed voltage transient for the SI2312CDS-T1-BE3 is specified as 80 V for a duration of ≤ 100 ns. Exceeding this limit may damage the device.
  • While the SI2312CDS-T1-BE3 is primarily designed for low-frequency applications, it can be used in high-frequency switching applications with proper design considerations. However, the device's switching performance may degrade at high frequencies (>100 kHz). Consult with a Vishay Intertechnologies' application engineer for specific guidance.
  • To prevent moisture damage, store the SI2312CDS-T1-BE3 in a dry, cool place with a relative humidity of ≤ 60%. Avoid exposing the device to temperatures above 30°C (86°F) or below -10°C (14°F) during storage.

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SI2312CDS-T1-BE3 Overview

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