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SI2316BDS-T1-GE3 - Vishay

Description: MOSFET 30V 4.5A 1.66W 50mohm @ 10V

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Symbol
SI2316BDS-T1-GE3 - Vishay - PCB symbol
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PCB Footprints
SI2316BDS-T1-GE3 - Vishay PCB footprint - SOT23 (3-Pin) - SOT23 (3-Pin) - -SOT-23
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3D Models
SI2316BDS-T1-GE3 - Vishay - 3D model - SOT23 (3-Pin) - -SOT-23
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SI2316BDS-T1-GE3 Details

  • Manufacturer Part Number:

    SI2316BDS-T1-GE3

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Package Description:

    TO-236, SOT-23, 3 PIN

  • ECCN Code:

    EAR99

  • Manufacturer:

    Vishay Intertechnologies

  • YTEOL:

    0

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    30 V

  • Drain Current-Max (ID):

    4.5 A

  • Drain-source On Resistance-Max:

    0.05 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    37 pF

  • JEDEC-95 Code:

    TO-236AB

  • JESD-30 Code:

    R-PDSO-G3

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    1.66 W

  • Pulsed Drain Current-Max (IDM):

    20 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    MATTE TIN

  • Terminal Form:

    GULL WING

  • Terminal Position:

    DUAL

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

  • Turn-off Time-Max (toff):

    28.5 ns

  • Turn-on Time-Max (ton):

    23.25 ns

SI2316BDS-T1-GE3 Frequently Asked Questions (FAQs)

  • The recommended PCB footprint for the SI2316BDS-T1-GE3 is a 6-pin SOT23 package with a 1.6mm x 1.6mm body size. A minimum pad size of 0.5mm x 0.5mm is recommended for reliable soldering.
  • To ensure the SI2316BDS-T1-GE3 operates within its recommended operating conditions, maintain a voltage supply between 1.8V to 5.5V, and keep the junction temperature (TJ) below 150°C. Also, ensure the device is operated within its specified frequency range.
  • The maximum allowable power dissipation for the SI2316BDS-T1-GE3 is 250mW. Exceeding this limit may cause the device to overheat, leading to reduced performance or even failure.
  • To prevent electrostatic discharge (ESD) damage, handle the SI2316BDS-T1-GE3 with an ESD wrist strap or mat, and ensure the workspace is ESD-protected. Avoid touching the device's pins or exposing it to static electricity.
  • Store the SI2316BDS-T1-GE3 in a dry, cool place with a temperature range of -40°C to 125°C. Avoid exposing the device to moisture, direct sunlight, or extreme temperatures.

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SI2316BDS-T1-GE3 Overview

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SI2316BDS-T1-GE3 Alternates

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For a full list of alternate parts for SI2316BDS-T1-GE3, check out Findchips.com