Please enter a minimum 3 letters or numbers
Technical Content
Part Image

SI2319CDS-T1-BE3 - Vishay

Description: MOSFET P-CHANNEL 40V (D-S

Download SI2319CDS-T1-BE3 Model
Schematic
symbols
Schematic symbol is unavailable for download
PCB
footprints
PCB footprint is unavailable for download
3D
models
3D model is unavailable for download
Send part feedback
Symbol
SI2319CDS-T1-BE3 - Vishay - PCB symbol
click to zoom
PCB Footprints
SI2319CDS-T1-BE3 - Vishay PCB footprint - SOT23 (3-Pin) - SOT23 (3-Pin) - SI2319CDS-T1-BE3*
click to zoom
3D Models
SI2319CDS-T1-BE3 - Vishay - 3D model - SOT23 (3-Pin) - SI2319CDS-T1-BE3*
click to zoom

SI2319CDS-T1-BE3 Details

  • Manufacturer Part Number:

    SI2319CDS-T1-BE3

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Not Recommended

  • Package Description:

    TO-236, SOT-23, 3 PIN

  • Country Of Origin:

    USA

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    15 Weeks

  • Manufacturer:

    Vishay Intertechnologies

  • YTEOL:

    3

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    40 V

  • Drain Current-Max (ID):

    4.4 A

  • Drain-source On Resistance-Max:

    0.077 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    61 pF

  • JEDEC-95 Code:

    TO-236AB

  • JESD-30 Code:

    R-PDSO-G3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Polarity/Channel Type:

    P-CHANNEL

  • Power Dissipation-Max (Abs):

    2.5 W

  • Pulsed Drain Current-Max (IDM):

    20 A

  • Reference Standard:

    IEC-61249-2-21

  • Surface Mount:

    YES

  • Terminal Form:

    GULL WING

  • Terminal Position:

    DUAL

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

  • Turn-off Time-Max (toff):

    46 ns

  • Turn-on Time-Max (ton):

    34 ns

SI2319CDS-T1-BE3 Frequently Asked Questions (FAQs)

  • The recommended PCB footprint for the SI2319CDS-T1-BE3 is a 6-pin SOT23 package with a 2.9mm x 1.6mm body size. The recommended land pattern is available in the Vishay Intertechnologies' application note or can be obtained from the manufacturer's website.
  • To ensure reliability in high-temperature applications, it is recommended to follow the derating guidelines provided in the datasheet. Additionally, consider using a thermal pad or heat sink to dissipate heat, and ensure proper PCB design and layout to minimize thermal resistance.
  • The maximum allowed voltage on the enable pin (EN) of the SI2319CDS-T1-BE3 is the same as the maximum supply voltage (VCC), which is 5.5V. Exceeding this voltage may damage the device.
  • Yes, the SI2319CDS-T1-BE3 is suitable for high-frequency switching applications. However, it is essential to consider the device's switching characteristics, such as rise and fall times, and ensure that the PCB design and layout can handle the high-frequency signals.
  • To troubleshoot issues with the SI2319CDS-T1-BE3, start by verifying the power supply voltage, checking for proper PCB design and layout, and ensuring that the device is operated within the recommended operating conditions. If the issue persists, consult the datasheet and application notes or contact Vishay Intertechnologies' technical support for further assistance.

Trust Checks

This model has been provided by community users.
Community Provided
This model has been verified by system checks.
System Verified
This model has been reviewed by community users.
Community Approved
Sponsored

SI2319CDS-T1-BE3 Overview

Use the download button to access the SI2319CDS-T1-BE3 schematic symbol, PCB footprint, and 3D model.
To find more CAD model downloads similar to this part, try a partial part number search, like SI231, or try a keyword search, such as Power Field-Effect Transistors

Parts related to SI2319CDS-T1-BE3

Showing 0 results

Part Image

← Prev Next →
About Us Contact Us Terms of Service Do not sell or share my personal information Privacy Policy Digital Services Act Library Loader Twitter LinkedIn

All content Copyright © 2020, Supplyframe.com. All rights reserved. Back to top ↑

SI2319CDS-T1-BE3 Alternates

Showing results

Image Part Number Model
Part Image PJA3441-AU_R1_000A1 PanJit Semiconductor

Power Field-Effect Transistor, 3.1A I(D), 40V, 0.088ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET
Part Image SI2319DS-T1 Vishay Intertechnologies

Power Field-Effect Transistor, 2.3A I(D), 40V, 0.082ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB
Part Image SI2319DS-T1-E3 Vishay Siliconix

Power Field-Effect Transistor, 2.3A I(D), 40V, 0.082ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB
Part Image SI2319DS-T1 Vishay Siliconix

Power Field-Effect Transistor, 2.3A I(D), 40V, 0.082ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB
Part Image SI2319DS Vishay Siliconix

Power Field-Effect Transistor, 2.3A I(D), 40V, 0.082ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB
For a full list of alternate parts for SI2319CDS-T1-BE3, check out Findchips.com