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SI2319DS-T1-E3 - Vishay

Description: SI2319DS-T1-E3, P-channel MOSFET Transistor 2.3 A 40 V, 3-Pin SOT-23, TO-236

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Symbol
SI2319DS-T1-E3 - Vishay - PCB symbol
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PCB Footprints
SI2319DS-T1-E3 - Vishay PCB footprint - SOT23 (3-Pin) - SOT23 (3-Pin) - sot-23-ren5
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3D Models
SI2319DS-T1-E3 - Vishay - 3D model - SOT23 (3-Pin) - sot-23-ren5
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SI2319DS-T1-E3 Details

  • Manufacturer Part Number:

    SI2319DS-T1-E3

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Package Description:

    TO-236, SOT-23, 3 PIN

  • ECCN Code:

    EAR99

  • Manufacturer:

    Vishay Intertechnologies

  • YTEOL:

    0

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    40 V

  • Drain Current-Max (ID):

    2.3 A

  • Drain-source On Resistance-Max:

    0.082 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    65 pF

  • JEDEC-95 Code:

    TO-236AB

  • JESD-30 Code:

    R-PDSO-G3

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    P-CHANNEL

  • Pulsed Drain Current-Max (IDM):

    12 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    MATTE TIN

  • Terminal Form:

    GULL WING

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

  • Turn-off Time-Max (toff):

    80 ns

  • Turn-on Time-Max (ton):

    40 ns

SI2319DS-T1-E3 Frequently Asked Questions (FAQs)

  • The recommended PCB footprint for the SI2319DS-T1-E3 is a 6-pin SOT23 package with a 1.5mm x 1.5mm body size. A minimum pad size of 0.5mm x 0.5mm is recommended for each pin.
  • To ensure proper biasing, connect the VCC pin to a stable 2.5V to 5.5V power supply, and the GND pin to a solid ground plane. Additionally, decouple the power supply with a 10uF capacitor to minimize noise and ensure stable operation.
  • The SI2319DS-T1-E3 is rated for operation from -40°C to 125°C. However, it's recommended to operate within the -20°C to 85°C range for optimal performance and reliability.
  • To prevent ESD damage, handle the SI2319DS-T1-E3 with an anti-static wrist strap or mat, and ensure the workspace is ESD-protected. Avoid touching the device's pins or exposed die, and use ESD-safe packaging and storage materials.
  • The SI2319DS-T1-E3 is an automotive-grade device, suitable for high-reliability applications. It meets the AEC-Q100 qualification standard for automotive-grade devices, ensuring it can withstand the harsh conditions of automotive environments.

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SI2319DS-T1-E3 Overview

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SI2319DS-T1-E3 Alternates

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Part Image SI2319CDS-T1-GE3 Vishay Intertechnologies

Power Field-Effect Transistor, 4.4A I(D), 40V, 0.077ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236
Part Image PJA3441_R1_00001 PanJit Semiconductor

Power Field-Effect Transistor, 3.1A I(D), 40V, 0.088ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET
Part Image SI2319CDS-T1-GE3 Vishay Siliconix

Power Field-Effect Transistor, 4.4A I(D), 40V, 0.077ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236
Part Image SI2319DS-T1-E3 Vishay Siliconix

Power Field-Effect Transistor, 2.3A I(D), 40V, 0.082ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB
Part Image SI2319DS-T1-GE3 Vishay Siliconix

Power Field-Effect Transistor, 2.3A I(D), 40V, 0.082ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB
For a full list of alternate parts for SI2319DS-T1-E3, check out Findchips.com