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SI2323DS-T1-BE3 - Vishay

Description: MOSFETs SOT23 P CHAN 20V

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Symbol
SI2323DS-T1-BE3 - Vishay - PCB symbol
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PCB Footprints
SI2323DS-T1-BE3 - Vishay PCB footprint - SOT23 (3-Pin) - SOT23 (3-Pin) - SOT-23 (TO-236): 3-LEAD*
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3D Models
SI2323DS-T1-BE3 - Vishay - 3D model - SOT23 (3-Pin) - SOT-23 (TO-236): 3-LEAD*
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SI2323DS-T1-BE3 Details

  • Manufacturer Part Number:

    SI2323DS-T1-BE3

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Package Description:

    TO-236, SOT-23, 3 PIN

  • ECCN Code:

    EAR99

  • Manufacturer:

    Vishay Intertechnologies

  • YTEOL:

    0

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    20 V

  • Drain Current-Max (ID):

    3.7 A

  • Drain-source On Resistance-Max:

    0.039 Ω

  • FET Technology:

    TRENCH MOSFET

  • Feedback Cap-Max (Crss):

    140 pF

  • JEDEC-95 Code:

    TO-236AB

  • JESD-30 Code:

    R-PDSO-G3

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    P-CHANNEL

  • Pulsed Drain Current-Max (IDM):

    20 A

  • Reference Standard:

    IEC-61249-2-21

  • Surface Mount:

    YES

  • Terminal Finish:

    MATTE TIN

  • Terminal Form:

    GULL WING

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

  • Turn-off Time-Max (toff):

    185 ns

  • Turn-on Time-Max (ton):

    105 ns

SI2323DS-T1-BE3 Frequently Asked Questions (FAQs)

  • A good PCB layout for the SI2323DS-T1-BE3 should ensure minimal parasitic inductance and capacitance. Keep the input and output traces short and away from noise sources. Use a solid ground plane and consider using a 4-layer board with a dedicated power plane. Refer to Vishay's application notes for more guidance.
  • The SI2323DS-T1-BE3 requires a bias voltage of 2.5V to 5.5V. Ensure the bias voltage is stable and noise-free. Use a low-dropout regulator (LDO) or a voltage reference to generate the bias voltage. Decouple the bias pin with a 10nF to 100nF capacitor to reduce noise.
  • The SI2323DS-T1-BE3 is specified to operate up to 3.2 GHz. However, the actual operating frequency may vary depending on the specific application and PCB layout. It's recommended to characterize the device in your specific application to determine the maximum operating frequency.
  • The SI2323DS-T1-BE3 has a maximum junction temperature of 150°C. Ensure good thermal conductivity by using a thermal pad or thermal tape on the exposed pad. Use a heat sink or a thermal interface material (TIM) to reduce thermal resistance. Keep the device away from heat sources and ensure good airflow.
  • The SI2323DS-T1-BE3 is a sensitive device and requires proper ESD protection. Use a human-body model (HBM) ESD protection diode or a transient voltage suppressor (TVS) with a voltage rating greater than the maximum operating voltage. Ensure the ESD protection device is placed close to the SI2323DS-T1-BE3.

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SI2323DS-T1-BE3 Overview

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