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SI2323DS-T1-E3 - Vishay

Description: SI2323DS-T1-E3, P-channel MOSFET Transistor 3.7 A 20 V, 3-Pin SOT-23, TO-236

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PCB Footprints
SI2323DS-T1-E3 - Vishay PCB footprint - SOT23 (3-Pin) - SOT23 (3-Pin) - SOT-23 (TO-236)
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3D Models
SI2323DS-T1-E3 - Vishay  - 3D model - SOT23 (3-Pin) - SOT-23 (TO-236)
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SI2323DS-T1-E3 Details

  • Manufacturer Part Number:

    SI2323DS-T1-E3

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Package Description:

    TO-236, SOT-23, 3 PIN

  • Reach Compliance Code:

    Compliant

  • ECCN Code:

    EAR99

  • Manufacturer:

    Vishay Intertechnologies

  • YTEOL:

    0

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    20 V

  • Drain Current-Max (ID):

    3.7 A

  • Drain-source On Resistance-Max:

    0.039 Ω

  • FET Technology:

    TRENCH MOSFET

  • Feedback Cap-Max (Crss):

    140 pF

  • JEDEC-95 Code:

    TO-236AB

  • JESD-30 Code:

    R-PDSO-G3

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    P-CHANNEL

  • Pulsed Drain Current-Max (IDM):

    20 A

  • Qualification Status:

    Not Qualified

  • Reference Standard:

    IEC-61249-2-21

  • Surface Mount:

    YES

  • Terminal Finish:

    MATTE TIN

  • Terminal Form:

    GULL WING

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

  • Turn-off Time-Max (toff):

    185 ns

  • Turn-on Time-Max (ton):

    105 ns

SI2323DS-T1-E3 Frequently Asked Questions (FAQs)

  • The recommended PCB layout and land pattern for the SI2323DS-T1-E3 can be found in the Vishay Intertechnologies application note AN10343. It provides guidelines for optimal PCB design, including pad sizes, spacing, and thermal considerations.
  • To ensure reliable operation across the full temperature range, it's essential to follow proper PCB design and layout guidelines, use a suitable thermal interface material, and consider the device's power dissipation and thermal resistance. Additionally, ensure that the device is operated within its specified voltage and current ratings.
  • The SI2323DS-T1-E3 has built-in ESD protection, but it's still essential to follow proper handling and assembly procedures to prevent ESD damage. For latch-up prevention, ensure that the device is operated within its specified voltage and current ratings, and avoid voltage spikes or transients that can trigger latch-up.
  • The SI2323DS-T1-E3 is a commercial-grade device, but Vishay Intertechnologies offers a range of high-reliability and aerospace-grade devices. For high-reliability or aerospace applications, consider using devices with a 'Q' or 'M' suffix, which are specifically designed and qualified for these applications.
  • The SI2323DS-T1-E3 has a maximum junction temperature of 150°C. To ensure reliable operation, ensure that the device is properly mounted on a heat sink or PCB with adequate thermal conductivity, and consider using thermal interface materials to reduce thermal resistance.

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SI2323DS-T1-E3 Overview

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