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SI2328DS-T1-E3 - Vishay

Description: SI2328DS-T1-E3, N-channel MOSFET Transistor 1.15 A 100 V, 3-Pin TO-236

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SI2328DS-T1-E3 - Vishay PCB footprint - SOT23 (3-Pin) - SOT23 (3-Pin) - SOT-23 (TO-236)
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SI2328DS-T1-E3 - Vishay  - 3D model - SOT23 (3-Pin) - SOT-23 (TO-236)
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SI2328DS-T1-E3 Details

  • Manufacturer Part Number:

    SI2328DS-T1-E3

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Not Recommended

  • Package Description:

    SOT-23, 3 PIN

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    13 Weeks

  • Manufacturer:

    Vishay Intertechnologies

  • YTEOL:

    3

  • Avalanche Energy Rating (Eas):

    1.8 mJ

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    100 V

  • Drain Current-Max (ID):

    1.15 A

  • Drain-source On Resistance-Max:

    0.25 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-236

  • JESD-30 Code:

    R-PDSO-G3

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    0.73 W

  • Pulsed Drain Current-Max (IDM):

    6 A

  • Qualification Status:

    Not Qualified

  • Reference Standard:

    IEC-61249-2-21

  • Surface Mount:

    YES

  • Terminal Finish:

    MATTE TIN

  • Terminal Form:

    GULL WING

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Element Material:

    SILICON

  • Turn-off Time-Max (toff):

    30 ns

  • Turn-on Time-Max (ton):

    28 ns

SI2328DS-T1-E3 Frequently Asked Questions (FAQs)

  • The recommended PCB footprint for the SI2328DS-T1-E3 is a standard SOIC-8 package with a 1.27mm pitch. A recommended land pattern is available in the Vishay Intertechnologies' application note or can be obtained from the manufacturer's website.
  • To ensure proper biasing, follow the recommended operating conditions outlined in the datasheet. Typically, this includes connecting VCC to a stable 3.3V or 5V power supply, and ensuring the input signals are within the specified voltage range. Additionally, decoupling capacitors may be required to filter out noise and ensure stable operation.
  • The maximum operating frequency of the SI2328DS-T1-E3 is 100 MHz. However, the actual operating frequency may be limited by the specific application, PCB layout, and signal integrity considerations.
  • The SI2328DS-T1-E3 has a maximum junction temperature of 150°C. To ensure reliable operation, follow proper thermal management practices, such as providing adequate heat dissipation paths, using thermal vias, and avoiding thermal hotspots on the PCB.
  • Yes, the SI2328DS-T1-E3 has built-in ESD protection, but it's still important to follow proper ESD handling and storage procedures to prevent damage. Additionally, consider adding external ESD protection devices or circuitry to ensure the device is protected from electrostatic discharge events.

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SI2328DS-T1-E3 Overview

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Part Image SI2328DS-T1-E3 Vishay Siliconix

Power Field-Effect Transistor, 1.15A I(D), 100V, 0.25ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236

Part Image SI2328DS Vishay Siliconix

Small Signal Field-Effect Transistor, 1.15A I(D), 100V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236