Part Image

SI2328DS-T1-GE3 - Vishay

Description: N-Channel 100 V 1.15A (Ta) 730mW (Ta) Surface Mount SOT-23-3 (TO-236), -55°C ~ 150°C

Download SI2328DS-T1-GE3 Model
Schematic
symbols
Schematic symbol is unavailable for download
PCB
footprints
PCB footprint is unavailable for download
3D
models
3D model is unavailable for download
PCB Footprints
SI2328DS-T1-GE3 - Vishay PCB footprint - SOT23 (3-Pin) - SOT23 (3-Pin) - SOT-23 (TO-236): 3-LEAD_2025
click to zoom
3D Models
SI2328DS-T1-GE3 - Vishay  - 3D model - SOT23 (3-Pin) - SOT-23 (TO-236): 3-LEAD_2025
click to zoom

SI2328DS-T1-GE3 Details

  • Manufacturer Part Number:

    SI2328DS-T1-GE3

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Not Recommended

  • Package Description:

    SOT-23, 3 PIN

  • Country Of Origin:

    Germany

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    13 Weeks

  • Manufacturer:

    Vishay Intertechnologies

  • YTEOL:

    3

  • Avalanche Energy Rating (Eas):

    1.8 mJ

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    100 V

  • Drain Current-Max (ID):

    1.15 A

  • Drain-source On Resistance-Max:

    0.25 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-236

  • JESD-30 Code:

    R-PDSO-G3

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    0.73 W

  • Pulsed Drain Current-Max (IDM):

    6 A

  • Qualification Status:

    Not Qualified

  • Reference Standard:

    IEC-61249-2-21

  • Surface Mount:

    YES

  • Terminal Finish:

    MATTE TIN

  • Terminal Form:

    GULL WING

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Element Material:

    SILICON

  • Turn-off Time-Max (toff):

    30 ns

  • Turn-on Time-Max (ton):

    28 ns

SI2328DS-T1-GE3 Frequently Asked Questions (FAQs)

  • The recommended PCB footprint for the SI2328DS-T1-GE3 is a standard SOIC-8 package with a 1.27mm pitch. A recommended land pattern is available in the Vishay Intertechnologies' application note or can be obtained from the manufacturer's website.
  • To ensure proper biasing, follow the recommended operating conditions outlined in the datasheet. Typically, this includes connecting the VCC pin to a stable 3.3V or 5V power supply, and ensuring the input signals are within the recommended voltage range. Additionally, decoupling capacitors may be required to filter out noise and ensure stable operation.
  • The maximum operating frequency of the SI2328DS-T1-GE3 is typically up to 100 MHz, but this may vary depending on the specific application and signal conditions. It's recommended to consult the datasheet and application notes for more information on frequency limitations and signal integrity considerations.
  • The SI2328DS-T1-GE3 has a maximum junction temperature of 150°C. To ensure reliable operation, it's essential to provide adequate heat dissipation. This can be achieved through the use of thermal vias, heat sinks, or other thermal management techniques. Consult the datasheet and application notes for more information on thermal management guidelines.
  • Yes, to minimize signal degradation and ensure optimal performance, it's recommended to follow good layout practices such as keeping signal traces short and direct, avoiding 90-degree turns, and using ground planes to reduce noise and electromagnetic interference (EMI).

Trust Checks

This model has been provided by community users.
Community Provided
This model has been verified by system checks.
System Verified
This model has been reviewed by community users.
Community Approved
Sponsored

SI2328DS-T1-GE3 Overview

Use the download button to access the SI2328DS-T1-GE3 schematic symbol, PCB footprint, and 3D model.
To find more CAD model downloads similar to this part, try a partial part number search, like SI232, or try a keyword search, such as Power Field-Effect Transistors

Parts related to SI2328DS-T1-GE3

Showing 0 results